IEC TS 63202-4:2022描述了在模拟阳光下测量晶体硅光伏电池的光和高温诱导退化（LETID）的程序。IEC 63202-1涵盖了测量晶体硅光伏电池初始光诱导降解（LID）的要求，其中评估了光伏电池在中等温度和初始持续时间下的LID降解风险，终止标准为20 kWh·m。本文件中描述的程序旨在评估光伏电池在高温和长时间光照射下的降解行为。 本文件中描述的程序可用于检测光伏电池[2]、[3]的LETID风险，并判断LETID缓解措施的有效性，例如生产监测的快速测试，从而帮助提高光伏组件的能量产量。

IEC TS 63202-4:2022 describes procedures for measuring the light and elevated temperature induced degradation (LETID) of crystalline silicon photovoltaic (PV) cells in simulated sunlight. The requirements for measuring initial light induced degradation (LID) of crystalline silicon PV cells are covered by IEC 63202-1, where LID degradation risk of PV cells under moderate temperature and initial durations within termination criteria of 20 kWh·m^-2 are evaluated. The procedures described in this document are to evaluate the degradation behaviour of PV cells under elevated temperature and longer duration of light irradiation. The procedures described in this document can be used to detect the LETID risks of PV cells [2],[3] and to judge the effectiveness of LETID mitigation measures, e.g. quick test for production monitoring, thus helping improve the energy yield of PV modules.