IEC 62276:2016(E)适用于合成石英、铌酸锂(LN)、钽酸锂(LT)、四硼酸锂(LBO)和硅酸镧镓(LGS)单晶晶片的制造，这些晶片旨在用作制造表面声波(SAW)滤波器和谐振器的衬底。与上一版相比，此版本包括以下重大技术变更: -表1中的欧拉角指示和图3中的轴方向的校正。 -3.3.3中对“双胞胎”的定义解释得不够清楚。因此，它被一个更详细的定义所修订。 -在4.2.13 a)中，石英晶片上不从表面穿过到背面的晶种的蚀刻通道的最大数量分为三个等级。用户将石英晶片的晶种部分用于器件。他们要求晶种中蚀刻通道较少的石英晶片，以减少器件的缺陷。晶种中蚀刻通道的分类可以促进石英晶片质量的提高。

IEC 62276:2016(E) applies to the manufacture of synthetic quartz, lithium niobate (LN), lithium tantalate (LT), lithium tetraborate (LBO), and lanthanum gallium silicate (LGS) single crystal wafers intended for use as substrates in the manufacture of surface acoustic wave (SAW) filters and resonators. This edition includes the following significant technical changes with respect to the previous edition:
- Corrections of Euler angle indications in Table 1 and axis directions in Figure 3.
- Definition of "twin" is not explained clearly enough in 3.3.3. Therefore it is revised by a more detailed definition.
- Etch channels maximum number at quartz wafer of seed which do not pass through from surface to back surface are classified for three grades in 4.2.13 a). Users use seed portions of quartz wafers for devices. They request quartz wafers with less etch channels in seeds to reduce defects of devices. The classification of etch channels in seed may prompt a rise in quartz wafer quality.