IEC 60749-44:2016建立了用于测量高密度集成电路半导体器件上的单事件效应(SEE)的程序，包括当经受由宇宙射线产生的大气中子辐射时具有存储器的半导体器件的数据保持能力。当装置在已知通量的中子束中照射时，测量单事件效应灵敏度。该测试方法可应用于任何类型的集成电路。 注1-高电压应力下的半导体器件可能会受到包括SEB、single event burnout和SEGR single event gate破裂在内的单事件效应，对于本文件中未涉及的主题，请参考IEC 62396-4。 注2-除了高能中子之外，由于低能（<1 eV）热中子，一些设备可能具有软错误率。对于本文件中未涉及的主题，请参考IEC 62396-5。

IEC 60749-44:2016 establishes a procedure for measuring the single event effects (SEEs) on high density integrated circuit semiconductor devices including data retention capability of semiconductor devices with memory when subjected to atmospheric neutron radiation produced by cosmic rays. The single event effects sensitivity is measured while the device is irradiated in a neutron beam of known flux. This test method can be applied to any type of integrated circuit.
NOTE 1 - Semiconductor devices under high voltage stress can be subject to single event effects including SEB, single event burnout and SEGR single event gate rupture, for this subject which is not covered in this document, please refer to IEC 62396-4.
NOTE 2 - In addition to the high energy neutrons some devices can have a soft error rate due to low energy (<1 eV) thermal neutrons. For this subject which is not covered in this document, please refer to IEC 62396-5.