IEC TR 62543:2022作为IEC TR 62543:2022 RLV提供，其中包含国际标准及其红线版本，显示了与上一版本相比技术内容的所有变化。IEC TR 62543:2022就该主题提供了一般指导用于高压直流(HVDC)输电的电压源转换器(VSC)。它描述了不仅是电压源的(包含电容性能量存储介质并且其中DC电压的极性保持固定)而且是使用可以通过控制动作接通和断开的半导体器件自换向的转换器。范围包括2？具有脉宽调制（PWM）的电平和3电平转换器，以及多电平转换器、模块化多电平转换器和级联两电平-电平转换器，但不包括2？在方波输出模式下，无PWM工作的电平和3电平转换器。使用电压源转换器的HVDC电力传输被称为“VSC传输”。本文描述了可用于VSC传输的各种类型的电路，以及它们的主要操作特性和典型应用。总体目标是为购买者提供一个指南，以协助指定VSC传输方案。线路换向和电流源转换器明确排除在本文档之外。与上一版相比，此版本包括以下重大技术变更: -在第3条中，删除了一些与IEC 62747中所列定义相同的冗余定义；-在4.3.4中，增加了具有专用金属回路的双极和刚性双极的描述和图表； -在4.4中，提及作为IGBT的可能替代方案的双模绝缘栅极晶体管(BiGT)和注入增强型栅极晶体管(IEGT)； -在5.6中，删除了对共模阻塞反应器的提及，因为这些反应器现在很少使用。

IEC TR 62543:2022 is available as IEC TR 62543:2022 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.

IEC TR 62543:2022 gives general guidance on the subject of voltage sourced converters (VSC) used for transmission of power by high voltage direct current (HVDC). It describes converters that are not only voltage sourced (containing a capacitive energy storage medium and where the polarity of DC voltage remains fixed) but also self-commutated, using semiconductor devices which can both be turned on and turned off by control action. The scope includes 2？level and 3-level converters with pulse-width modulation (PWM), along with multi-level converters, modular multi-level converters and cascaded two-level converters, but excludes 2？level and 3-level converters operated without PWM, in square-wave output mode. HVDC power transmission using voltage sourced converters is known as "VSC transmission". The various types of circuit that can be used for VSC transmission are described in this document, along with their principal operational characteristics and typical applications. The overall aim is to provide a guide for purchasers to assist with the task of specifying a VSC transmission scheme. Line-commutated and current-sourced converters are specifically excluded from this document. This edition includes the following significant technical changes with respect to the previous edition:
- in Clause 3, some redundant definitions which were identical to those listed in IEC 62747 have been deleted;
- in 4.3.4, description and diagrams have been added for the cases of a bipole with dedicated metallic return and a rigid bipole;
- in 4.4, mention is made of the bi-mode insulated gate transistor (BiGT) and injection enhanced gate transistor (IEGT) as possible alternatives to the IGBT;
- in 5.6, the reference to common-mode blocking reactors has been deleted since these are very rarely used nowadays.