1.1 本试验方法描述了用于检测接触电阻瞬变的设备和技术，所述接触电阻瞬变产生的电阻大于规定值并持续至少规定的最小持续时间。 1.2 本标准规定的最小持续时间为1 ns、10 ns和50 ns。 1.3 本标准中事件检测所需的最小样品电阻为10 Ω。 1.4 用于测量不同持续时间的电接触瞬变的ASTM指南可作为指南 B854 . 1.5 以SI单位表示的值将被视为标准值。本标准不包括其他计量单位。 1.6 本标准并不旨在解决与其使用相关的所有安全性问题（如果有）。本标准的使用者有责任熟悉所有危害，包括制造商提供的本产品/材料的适当材料安全数据表（MSDS）中确定的危害，以确定适当的安全、健康和环境实践，并在使用前确定监管限制的适用性。 1.7 本国际标准是根据世界贸易组织技术性贸易壁垒委员会发布的《关于制定国际标准、指南和建议的原则的决定》中确立的国际公认的标准化原则制定的。 ======意义和用途====== 4.1 本测试方法中的测试旨在评估电触点或连接的电阻稳定性。 4.2 所描述的过程用于检测由短持续时间、高电阻波动或可能导致高速数字电路不正确触发的电压变化引起的事件。 4.3 在这些程序中，当测试样品的电阻在0 Ω和10 Ω之间时，测试电流为100mA(±20mA)。因为产生事件所需的最小电阻变化（定义见 3.2.1 ）规定为10 Ω（见 1.3 ），产生此事件所需的电压增量必须至少为1.0 V。 4.4 当应用易受噪声影响时，纳秒持续时间事件的检测被认为是必要的。然而，这些程序不能确定检测到的事件的实际持续时间。 4.5 纳秒持续时间信号的完整性只能通过传输线来保持；因此，串联的触点通过同轴电缆连接到检测器通道。当监测的电阻超过最小事件电阻超过指定持续时间时，检测器将指示。4.6 对应于1 ns、10 ns或50 ns的特定最小事件持续时间的测试条件名称列于 表1 这些应在参考文件中指定。

1.1 This test method describes equipment and techniques for detecting contact resistance transients yielding resistances greater than a specified value and lasting for at least a specified minimum duration. 1.2 The minimum durations specified in this standard are 1 ns, 10 ns, and 50 ns. 1.3 The minimum sample resistance required for an event detection in this standard is 10 Ω. 1.4 An ASTM guide for measuring electrical contact transients of various durations is available as Guide B854 . 1.5 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to become familiar with all hazards including those identified in the appropriate Material Safety Data Sheet (MSDS) for this product/material as provided by the manufacturer, to establish appropriate safety, health, and environmental practices, and determine the applicability of regulatory limitations prior to use. 1.7 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee. ====== Significance And Use ====== 4.1 The tests in this test method are designed to assess the resistance stability of electrical contacts or connections. 4.2 The described procedures are for the detection of events that result from short duration, high-resistance fluctuations, or of voltage variations that may result in improper triggering of high speed digital circuits. 4.3 In those procedures, the test currents are 100 mA (±20 mA) when the test sample has a resistance between 0 Ω and 10 Ω. Since the minimum resistance change required to produce an event (defined in 3.2.1 ) is specified as 10 Ω (see 1.3 ), the voltage increase required to produce this event must be at least 1.0 V. 4.4 The detection of nanosecond-duration events is considered necessary when an application is susceptible to noise. However, these procedures are not capable of determining the actual duration of the event detected. 4.5 The integrity of nanosecond-duration signals can only be maintained with transmission lines; therefore, contacts in series are connected to a detector channel through coaxial cable. The detector will indicate when the resistance monitored exceeds the minimum event resistance for more than the specified duration. 4.6 The test condition designation corresponding to a specific minimum event duration of 1 ns, 10 ns, or 50 ns is listed in Table 1 . These shall be specified in the referencing document.