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现行 IEC TS 62607-6-20:2022
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Nanomanufacturing - Key control characteristics - Part 6-20: Graphene-based material - Metallic impurity content: Inductively coupled plasma mass spectrometry 纳米制造.关键控制特性.第6-20部分:石墨烯基材料.金属杂质含量:电感耦合等离子体质谱法
发布日期: 2022-10-11
IEC TS 62607-6-20:20 22(EN)IEC TS 62607建立了确定化学关键控制特性的标准化方法 -金属杂质含量 对于石墨烯基材料的粉末 -电感耦合等离子体质谱(ICP-MS)。 通过ICP-MS的MS光谱由被测元素的信号强度导出金属杂质含量。 -该方法适用于石墨烯和相关材料的粉末,包括双层石墨烯(2LG)、三层石墨烯(3LG)、少层石墨烯(FLG)、还原氧化石墨烯(rGO)和氧化石墨烯(GO)。 -典型应用领域是微电子行业,例如导电浆料、显示器等,供制造商指导材料设计,并供下游用户选择合适的产品。
IEC TS 62607-6-20:2022 (EN) IEC TS 62607 establishes a standardized method to determine the chemical key control characteristic
- metallic impurity content
for powders of graphene-based materials by
- inductively coupled plasma mass spectrometry (ICP-MS).
The metallic impurity content is derived by the signal intensity of measured elements through MS spectrum of ICP-MS.
- The method is applicable for powder of graphene and related materials, including bilayer graphene (2LG), trilayer graphene (3LG), few-layer graphene (FLG), reduced graphene oxide (rGO) and graphene oxide (GO).
– The typical application area is in the microelectronics industry, e.g. conductive pastes, displays, etc., for manufacturers to guide material design, and for downstream users to select suitable products.
分类信息
发布单位或类别: 国际组织-国际电工委员会
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研制信息
归口单位: TC 113
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