BS EN 60749-44:2016建立了测量单事件效应的程序（见） 关于高密度集成电路半导体器件，包括 当受到大气中子辐射时产生的具有存储器的半导体器件 通过宇宙射线。单粒子效应灵敏度是在装置在一个特定环境中辐照时测量的 已知通量的中子束。这种测试方法适用于任何类型的集成电路。注1:高压应力下的半导体器件可能会受到单粒子效应的影响，包括SEB， 单事件烧毁和SEGR单事件闸门破裂，对于本文件未涉及的主题， 请参考IEC 626-394。注2:除高能中子外，由于能量较低（<1 eV），一些设备可能具有软错误率 热中子。关于本文件未涉及的主题，请参考IEC 62396-5[3]。交叉引用:IEC 60749-38EN 60749-38IEC 62396-4IEC 62396-5JEITA EDR4705JESD89-AJESD89-1AJESD89-2AJESD89-3购买本文件时可获得的所有现行修订均包含在购买本文件中。

BS EN 60749-44:2016 establishes a procedure for measuring the single event effects (SEEs) on high density integrated circuit semiconductor devices including data retention capability of semiconductor devices with memory when subjected to atmospheric neutron radiation produced by cosmic rays. The single event effects sensitivity is measured while the device is irradiated in a neutron beam of known flux. This test method can be applied to any type of integrated circuit.NOTE 1 Semiconductor devices under high voltage stress can be subject to single event effects including SEB, single event burnout and SEGR single event gate rupture, for this subject which is not covered in this document, please refer to IEC 62396-4 [2].NOTE 2 In addition to the high energy neutrons some devices can have a soft error rate due to low energy (<1 eV) thermal neutrons. For this subject which is not covered in this document, please refer to IEC 62396-5 [3].Cross References:IEC 60749-38EN 60749-38IEC 62396-4IEC 62396-5JEITA EDR4705JESD89-AJESD89-1AJESD89-2AJESD89-3AAll current amendments available at time of purchase are included with the purchase of this document.