本文件给出了单壁碳纳米管（SWCNT）的表征指南 使用近红外（NIR）光致发光（PL）光谱。 它为测定半导体的手性指数提供了一种测量方法 样品中的单壁碳纳米管及其相对积分发光强度。 该方法可以扩展到估算半导体单壁碳纳米管的相对质量浓度 从他们测量的积分光致发光强度和光致发光截面知识中提取样本。交叉引用:ISO/TS 80004-4ISO/TS 80004-6购买本文件时可获得的所有现行修订版均包含在购买本文件中。

This document gives guidelines for the characterization of single-wall carbon nanotubes (SWCNTs) using near infrared (NIR) photoluminescence (PL) spectroscopy. It provides a measurement method for the determination of the chiral indices of the semi-conducting SWCNTs in a sample and their relative integrated PL intensities. The method can be expanded to estimate the relative mass concentrations of semi-conducting SWCNTs in a sample from their measured integrated PL intensities and knowledge of their PL cross-sections.Cross References:ISO/TS 80004-4ISO/TS 80004-6All current amendments available at time of purchase are included with the purchase of this document.