IEC TS 62804-1:2015（E）规定了测试和评估晶体硅光伏（PV）组件在短期高压应力（包括潜在诱发退化（PID））影响下的耐久性的程序。定义了两种测试方法，它们本质上不会产生相同的结果。它们被作为筛选测试；这两种测试都不包括自然环境中存在的所有可能影响PID速率的因素。这些方法描述了如何达到恒定的压力水平。本技术规范中的测试针对具有一个或两个玻璃表面的晶体硅光伏组件、具有钝化介电层的硅电池、涉及移动离子影响硅半导体上电场或与硅半导体本身进行电子交互的降解机制。

IEC TS 62804-1:2015(E) defines procedures to test and evaluate the durability of crystalline silicon photovoltaic (PV) modules to the effects of short-term high-voltage stress including potential-induced degradation (PID). Two test methods are defined that do not inherently produce equivalent results. They are given as screening tests; neither test includes all the factors existing in the natural environment that can affect the PID rate. The methods describe how to achieve a constant stress level. The testing in this Technical Specification is designed for crystalline silicon PV modules with one or two glass surfaces, silicon cells having passivating dielectric layers, for degradation mechanisms involving mobile ions influencing the electric field over the silicon semiconductor, or electronically interacting with the silicon semiconductor itself.