本文件规定了使用紫外光致发光(UVPL)成像测定碳化硅(SiC)晶片或块状晶体中的多型及其比率的测试方法。SiC的范围限于掺杂氮和硼以分别具有深受主能级和浅施主能级的半导体SiC。本文中讨论的SiC晶片或块状晶体通常显示的电阻率范围为10？3欧姆·厘米到10？2欧姆·cm，适用于电力电子器件。 该方法适用于SiC晶体4H、6H和15R多型，其分别含有硼和氮作为受体和供体，其浓度产生供体-受体对(DAP)以产生UVPL。在4H-SiC中，硼和氮的浓度通常在1016 cm？3到1018厘米？3.半绝缘SiC不受关注，因为它通常含有极少的硼和氮；因此无法达到深层。

This document specifies a test method for determining the polytypes and their ratios in silicon carbide (SiC) wafers or bulk crystals using ultraviolet photoluminescence (UVPL) imaging. The range of SiC is limited to semiconductor SiC doped with nitrogen and boron to have a deep acceptor level and a shallow donor level, respectively. The SiC wafers or bulk crystals discussed in this document typically show electrical resistivities ranging from 10^？3 ohm · cm to 10^？2 ohm · cm, applicable to power electronic devices. This method is applicable to the SiC-crystal 4H, 6H and 15R polytypes that contain boron and nitrogen as acceptor and donor, respectively, at concentrations that produce donor-acceptor pairs (DAPs) to generate UVPL. In 4H-SiC the boron and nitrogen concentrations typically range from 10¹⁶ cm^？3 to 10¹⁸ cm^？3. Semi-insulating SiC is not of concern because it usually contains minimal boron and nitrogen; therefore deep level cannot be achieved.