现行

GB/T 14139-2019

硅外延片
Silicon epitaxial wafers

2019-06-04

现行

GB/T 14015-1992

硅-蓝宝石外延片
Silicon on sapphire epitaxial wafers

1992-12-28

现行

GB/T 43885-2024

碳化硅外延片
Silicon carbide epitaxial wafers

2024-04-25

现行

GB/T 35310-2017

200mm硅外延片
200mm silicon epitaxial wafer

2017-12-29

现行

YS/T 1060-2015

硅外延用三氯氢硅中其他氯硅烷含量的测定　气相色谱法
Determination of other chlorosilane in trichlorosilane for silicon eqitaxy—Gas chromatographic method

2015-04-30

现行

GB/T 29056-2012

硅外延用三氯氢硅化学分析方法 硼、铝、磷、钒、铬、锰、铁、钴、镍、铜、钼、砷和锑量的测定 电感耦合等离子体质谱法
Trichlorosilane for silicon epitaxy - Determination of boron，aluminium，phosphorus，vanadium，chrome，manganese，iron，cobalt，nickel，copper，molybdenum，arsenic and antimony content - Inductively coupled plasma mass spectrometric method

2012-12-31

现行

YS/T 1059-2015

硅外延用三氯氢硅中总碳的测定　气相色谱法
Determination of total carbon content in trichlorosilane for silicon eqitaxy—Gas chromatographic method

2015-04-30

现行

GB/T 14142-2017

硅外延层晶体完整性检验方法 腐蚀法
Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique

2017-09-29

现行

GB/T 42905-2023

碳化硅外延层厚度的测试 红外反射法
Test method for thickness of silicon carbide epitaxial layer—Infrared reflectance method

2023-08-06

现行

GB/T 14146-2021

硅外延层载流子浓度的测试 电容-电压法
Test method for carrier concentration of silicon epitaxial layers—Capacitance-voltage method

2021-05-21

现行

GB/T 14847-2010

重掺杂衬底上轻掺杂硅外延层厚度的红外反射测量方法
Test mothod for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance

2011-01-10

现行

SJ/T 10481-1994

硅外延层电阻率的面接触三探针方法
Test method for resistivity of silicon epitaxial layers by area contacts three-probe techniques

1994-04-11

现行

IEC 63229-2021

Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
半导体器件.碳化硅衬底上氮化镓外延膜缺陷的分类

2021-04-07

现行

GB/T 42902-2023

碳化硅外延片表面缺陷的测试 激光散射法
Test method for surface defects on silicon carbide epitaxial wafers—Laser scattering method

2023-08-06

现行

DL/T 2310-2021

电力系统高压功率器件用碳化硅外延片使用条件
Acceptance specification for silicon carbide epitaxial wafer of high voltage power devices in the grid system

2021-04-26

现行

SJ 1830-1981

３ＤＫ１０１型ＮＰＮ硅外延平面小功率开关三极管
Detail specification for silicon NPN epitaxial planar low power switching transistors,Type 3DK101

1981-09-10

现行

SJ 1826-1981

３ＤＫ１００型ＮＰＮ硅外延平面小功率开关三极管
Detail specification for silicon NPN epitaxial planar low power switching transistors,Type 3DK100

1981-09-10

现行

SJ 1480-1979

３ＣＧ１３０型ＰＮＰ硅外延平面高频小功率三极管
Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG130

1979-09-11

现行

SJ 1477-1979

３ＣＧ１２０型ＰＮＰ硅外延平面高频小功率三极管
Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG120

1979-09-11

现行

SJ 1472-1979

３ＣＧ１１０型ＰＮＰ硅外延平面高频小功率三极管
Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG110

1979-09-11