1.1 本规程规定了确保硅和砷化镓电子零件中子诱发位移损伤测试一致性的要求。这需要对影响这些测试准确性和再现性的设施、剂量测定、测试仪和通信过程进行控制。它提供了有关中子测试要求和附加建议的技术基础的背景信息。 1.2 提出了确保和验证集成电路、晶体管和二极管等电子部件中子位移损伤测试一致性的方法。本实施规程中确定的问题和规定的控制措施涉及辐射环境的特征和适用性。 它们通常适用于反应堆源、基于加速器的中子源，例如14 MeV DT源，以及 252 Cf来源。确定了导致复杂性或问题的设施和环境特征，并提出了识别、最小化或消除这些问题的建议。设施用户、测试人员、设施操作员和独立过程验证器可使用本规程来确定设施内特定环境和整个测试过程的适用性。电气测量在其他标准中进行了说明，如指南 F980 . 在实践中可以找到有关传导辐照的其他信息 E798 和 F1190 . 这种做法也可用于测试赞助商（制定测试规范或以其他方式对中子环境中的电子性能有既得利益的组织）。 1.3 本实践中讨论了评估和控制意外损害的方法。提供了相关ASTM标准和技术报告的参考。用于达到电子系统的适当测试环境和规范水平的过程和方法不在本规程的范围内；然而，根据操作环境中子谱确定1-MeV等效位移规范的过程应采用本文所述的方法和参数。本文讨论了一些重要的考虑因素和建议 附录X1 （非强制性信息）。 1.4 以国际单位制表示的数值应视为标准值。本标准不包括其他计量单位。 1.5 本标准并非旨在解决与其使用相关的所有安全问题（如有）。本标准的用户有责任在使用前制定适当的安全、健康和环境实践，并确定监管限制的适用性。 1.6 本国际标准是根据世界贸易组织技术性贸易壁垒（TBT）委员会发布的《关于制定国际标准、指南和建议的原则的决定》中确立的国际公认标准化原则制定的。 ====意义和用途====== 4.1 本规程主要用于指导试验参与者建立、识别、维护和使用合适的环境来进行高质量中子试验。 它的发展在很大程度上是受激励的，因为在过去的一些情况下，中子效应试验过程中的控制不充分导致暴露量与辐照规范相差三倍或三倍以上。辐射测试环境通常不同于电子设备必须运行的环境（操作环境）；因此，高质量的测试不仅需要使用合适的辐射环境，还需要控制和补偿不同于操作环境的损害。一般来说，确定合适的测试环境以实现测试目标的责任在于团队的发起人/用户/测试人员和测试专家部分，并在独立验证器（如果可用）的协助下。 建立和维护合适环境的责任在于设施操作员/剂量计和测试专家，同样在独立验证器的可能协助下。实践中提供了关于选择辐照设施的额外指导 F1190 . 4.2 本实践确定了必须完成的任务，以确保高质量测试的成功。赞助商或用户全面负责确保完成所有要求的任务并满足条件。其他参与者提供适当的文件，使赞助商或用户能够做出决定。 4.3 正确进行测试的主要决定因素是: ( 1. )辐射试验环境应具有良好的特性、受控性，并与规定的辐射水平相关联；( 2. )电子材料和设备中产生的损坏是由所需的特定环境成分造成的，并且可以在任何其他合适的设施中复制；和( 3. )根据测试环境产生的损坏，可以预测电子设备必须在其中工作的辐射环境中产生的与规格级别对应的损坏。为了确保满足这些要求，系统开发人员、购电方、用户、设施操作员和测试人员必须共同满足所有基本要求，并有效地相互沟通必须完成的任务和必须满足的条件。 第节介绍了确定和保持中子辐射环境对电子零件1-MeV等效位移损伤测试的适用性的标准 5. . 电子零件中子位移损伤测试中测试一致性的强制性要求见第节 5. . 中子测试的其他背景材料以及伽马剂量和剂量率效应的重要考虑因素见（非强制性） 附录X1 和 附录X2 ，但不要求遵守。 4.4 一些中子测试是在考虑电子设备的特定终端应用的情况下进行的。执行其他操作只是为了确保满足1-MeV等效位移损伤规范水平。 本实践中提出的问题和控制措施是必要的，足以确保后一种情况下的一致性。当目标是确定设备在操作环境中的性能时，它们是必要的，但可能不够。在这两种情况下，必然的一致性要求是，在适当的设施中获得的测试结果可以在任何其他适当的设施中以适当的精度复制。 4.4.1 电子设备辐射效应测试的目标通常是根据测试环境中获得的数据预测设备在操作环境中的性能。如果操作环境和测试环境之间存在重大差异，则需要使用损伤等效方法，以实现所需的对应。 该过程如所示 图1 . 过程的一部分（A，in 图1 )这建立了选择适当的1-MeV当量规范水平所需的运行中子环境，超出了本规程的范围。然而，如果使用中子谱来设置1 MeV当量注量规范水平，则重要的是该过程（B，in 图1 )与此实践保持一致。损伤等效方法必须解决操作和测试环境中导致损伤的所有重要因素，否则可能无法实现测试目标。在核反应堆产生的中子-γ混合辐射场中，大多数永久性损伤发生在固体中- 状态半导体器件是由快中子通过初级碰撞原子及其相关损伤级联产生的位移损伤引起的。所有测试参与者必须使用相同的损伤函数，以确保损伤等效。当前版本的实践中提供了硅和砷化镓的损伤函数 E722 （参见 注1 ). 目前，除了硅和砷化镓之外，还没有开发和验证用于中子位移损伤的损伤等效方法。 图1 损伤等效过程 注1: 当将测试规范和测试结果与历史测试中获得的数据进行比较时，可能有必要调整规范和测试数据，以说明随着更准确和可靠的损伤函数的可用性，损伤函数多年来发生的变化。 4.4.2 如果提供了1-MeV等效中子注量规范或中子谱，则损伤等效方法如所示 图1 ，用于确保提供正确的中子注量，并且放置在暴露位置的设备中的损坏与该位置中子的位移能量相关。

1.1 This practice sets forth requirements to ensure consistency in neutron-induced displacement damage testing of silicon and gallium arsenide electronic piece parts. This requires controls on facility, dosimetry, tester, and communications processes that affect the accuracy and reproducibility of these tests. It provides background information on the technical basis for the requirements and additional recommendations on neutron testing. 1.2 Methods are presented for ensuring and validating consistency in neutron displacement damage testing of electronic parts such as integrated circuits, transistors, and diodes. The issues identified and the controls set forth in this practice address the characterization and suitability of the radiation environments. They generally apply to reactor sources, accelerator-based neutron sources, such as 14-MeV DT sources, and 252 Cf sources. Facility and environment characteristics that introduce complications or problems are identified, and recommendations are offered to recognize, minimize or eliminate these problems. This practice may be used by facility users, test personnel, facility operators, and independent process validators to determine the suitability of a specific environment within a facility and of the testing process as a whole. Electrical measurements are addressed in other standards, such as Guide F980 . Additional information on conducting irradiations can be found in Practices E798 and F1190 . This practice also may be of use to test sponsors (organizations that establish test specifications or otherwise have a vested interest in the performance of electronics in neutron environments). 1.3 Methods for the evaluation and control of undesired contributions to damage are discussed in this practice. References to relevant ASTM standards and technical reports are provided. Processes and methods used to arrive at the appropriate test environments and specification levels for electronics systems are beyond the scope of this practice; however, the process for determining the 1-MeV equivalent displacement specifications from operational environment neutron spectra should employ the methods and parameters described herein. Some important considerations and recommendations are addressed in Appendix X1 (Nonmandatory information). 1.4 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use. 1.6 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee. ====== Significance And Use ====== 4.1 This practice was written primarily to guide test participants in establishing, identifying, maintaining, and using suitable environments for conducting high quality neutron tests. Its development was motivated, in large measure, because inadequate controls in the neutron-effects-test process have, in some past instances, resulted in exposures that have differed by factors of three or more from irradiation specifications. A radiation test environment generally differs from the environment in which the electronics must operate (the operational environment); therefore, a high quality test requires not only the use of a suitable radiation environment, but also control and compensation for contributions to damage that differ from those in the operational environment. In general, the responsibility for identifying suitable test environments to accomplish test objectives lies with the sponsor/user/tester and test specialist part of the team, with the assistance of an independent validator, if available. The responsibility for the establishment and maintenance of suitable environments lies with the facility operator/dosimetrist and test specialist, again with the possible assistance of an independent validator. Additional guidance on the selection of an irradiation facility is provided in Practice F1190 . 4.2 This practice identifies the tasks that must be accomplished to ensure a successful high quality test. It is the overall responsibility of the sponsor or user to ensure that all of the required tasks are complete and conditions are met. Other participants provide appropriate documentation to enable the sponsor or user to make that determination. 4.3 The principal determinants of a properly conducted test are: ( 1 ) the radiation test environment shall be well characterized, controlled, and correlated with the specified irradiation levels; ( 2 ) damage produced in the electronic materials and devices is caused by the desired, specified component of the environment and can be reproduced at any other suitable facility; and ( 3 ) the damage corresponding to the specification level derived from radiation environments in which the electronics must operate can be predicted from the damage produced by the test environment. In order to ensure that these requirements are met, system developers, procurers, users, facility operators, and test personnel must collectively meet all of the essential requirements and effectively communicate to each other the tasks that must be accomplished and the conditions that must be met. Criteria for determining and maintaining the suitability of neutron radiation environments for 1-MeV equivalent displacement damage testing of electronics parts are presented in Section 5 . Mandatory requirements for test consistency in neutron displacement damage testing of electronic parts are presented in Section 5 . Additional background material on neutron testing and important considerations for gamma dose and dose rate effects are presented in (non-mandatory) Appendix X1 and Appendix X2 , but compliance is not required. 4.4 Some neutron tests are performed with a specific end application for the electronics in mind. Others are performed merely to ensure that a 1-MeV-equivalent-displacement-damage-specification level is met. The issues and controls presented in this practice are necessary and sufficient to ensure consistency in the latter case. They are necessary, but may not be sufficient, when the objective is to determine device performance in an operational environment. In either case, a corollary consistency requirement is that test results obtained at a suitable facility can be replicated within suitable precision at any other suitable facility. 4.4.1 An objective of radiation effects testing of electronic devices is often to predict device performance in operational environments from the data that is obtained in the test environments. If the operational and test environments differ materially from each other, then damage equivalence methodologies are required in order to make the required correspondences. This process is shown schematically in Fig. 1 . The part of the process (A, in Fig. 1 ) that establishes the operational neutron environments required to select the appropriate 1-MeV-equivalent specification level, or levels, is beyond the scope of this practice. However, if a neutron spectrum is used to set a 1 MeV equivalent fluence specification level, it is important that the process (B, in Fig. 1 ) be consistent with this practice. Damage equivalence methodologies must address all of the important contributors to damage in the operational and test environments or the objectives of the test may not be met. In the mixed neutron-gamma radiation fields produced by nuclear reactors, most of the permanent damage in solid-state semiconductor devices results from displacement damage produced by fast neutrons through primary knock-on atoms and their associated damage cascades. The same damage functions must be used by all test participants to ensure damage equivalence. Damage functions for silicon and gallium arsenide are provided in the current edition of Practice E722 (see Note 1 ). At present, no damage equivalence methodologies for neutron displacement damage have been developed and validated for semiconductors other than silicon and gallium arsenide. FIG. 1 Process for Damage Equivalence Note 1: When comparing test specifications and test results from data obtained in historical tests, it may be necessary to adjust specifications and test data to account for changes in damage functions which have evolved through the years as more accurate and reliable damage functions have become available. 4.4.2 If a 1-MeV equivalent neutron fluence specification, or a neutron spectrum, is provided, the damage equivalence methodology, shown schematically in Fig. 1 , is used to ensure that the correct neutron fluence is provided and that the damage in devices placed in the exposure position correlates with the displacement energy from the neutrons at that location.