1.1 本指南仅严格适用于无偏硅（Si）或砷化镓（GaAs）半导体组件（集成电路、晶体管和二极管）暴露于中子辐射，以确定组件中的永久位移损伤。验证了国家标准中编纂的1-MeV位移损伤函数，例如实践 E722 ，而GaAs目前还没有标准化用于其他半导体材料。 1.2 本指南的元素，以及所指出的偏差，也可适用于由其他材料组成的半导体的暴露，例如Ge、GaN、SiC或AlN，但国家标准中编码的经验证的1-MeV位移损伤函数目前不可用。 1.3 本指南仅涉及暴露条件。应使用适当的电气测试方法来确定辐射对试样的影响。 1.4 本指南解决了与中子辐照有关的问题。 1.5 本指南不包括系统和子系统暴露和测试方法。 1.6 位移损伤半导体测试中中子注量的关注范围约为10 9 至10 16 1-MeV（Si）-等式-n/cm 2. . 1.7 本指南不涉及中子引起的单次或多次中子事件效应（nSEE）或瞬态退火。 1.8 本指南提供了试验方法1017中子位移试验的替代方案，中子位移试验是MIL的一个组成部分- STD-883和MIL-STD-750。 1.9 本标准并不旨在解决与其使用相关的所有安全问题（如有）。本标准的使用者有责任在使用前制定适当的安全、健康和环境实践，并确定监管限制的适用性。 1.10 本国际标准是根据世界贸易组织技术性贸易壁垒委员会发布的《关于制定国际标准、指南和建议的原则的决定》中确立的国际公认的标准化原则制定的。 ====意义和用途====== 5.1 半导体器件可能会被中子永久损坏 ( 1. , 2. ) . 6. 这种损伤对电子部件性能的影响可以通过测量部件在暴露于感兴趣的中子注量范围内的快中子之前和之后的电特性来确定。所得数据可用于设计能够容忍该部件表现出的退化的电子电路。 5.2 本指南提供了一种方法，通过该方法可以以可重复的方式将硅和砷化镓半导体器件暴露于中子辐照，并允许对在不同设施获得的数据进行比较。 5.3 对于硅和砷化镓以外的半导体，适用的已验证1- MeV损伤功能目前在成文的国家标准中不可用。在没有经过验证的1-MeV损伤函数的情况下，非电离能量损失（NIEL），见实践 E3084 ，或位移kerma，作为入射中子能量的函数，归一化为1-MeV能量区域中的响应，可以用作近似值。参见实践 E722 用于描述用于确定Si和GaAs中的损伤函数的方法 ( 3. ) .

1.1 This guide strictly applies only to the exposure of unbiased silicon (Si) or gallium arsenide (GaAs) semiconductor components (integrated circuits, transistors, and diodes) to neutron radiation to determine the permanent displacement damage in the components. Validated 1-MeV displacement damage functions codified in national standards, for example Practice E722 , for silicon and GaAs are not currently standardized for other semiconductor materials. 1.2 Elements of this guide, with the deviations noted, may also be applicable to the exposure of semiconductors comprised of other materials, for example Ge, GaN, SiC, or AlN, except that validated 1-MeV displacement damage functions, codified in national standards, are not currently available. 1.3 Only the conditions of exposure are addressed in this guide. The effects of radiation on the test sample should be determined using appropriate electrical test methods. 1.4 This guide addresses those issues and concerns pertaining to irradiations with neutrons. 1.5 System and subsystem exposures and test methods are not included in this guide. 1.6 The range of interest for neutron fluence in displacement damage semiconductor testing ranges from approximately 10 9 to 10 16 1-MeV (Si)-Eqv.-n/cm 2 . 1.7 This guide does not address neutron-induced single or multiple neutron event effects (nSEE) or transient annealing. 1.8 This guide provides an alternative to Test Method 1017, Neutron Displacement Testing, a component of MIL-STD-883 and MIL-STD-750. 1.9 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use. 1.10 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee. ====== Significance And Use ====== 5.1 Semiconductor devices can be permanently damaged by neutrons ( 1 , 2 ) . 6 The effect of such damage on the performance of an electronic component can be determined by measuring the component’s electrical characteristics before and after exposure to fast neutrons in the neutron fluence range of interest. The resulting data can be utilized in the design of electronic circuits that are tolerant of the degradation exhibited by that component. 5.2 This guide provides a method by which the exposure of silicon and gallium arsenide semiconductor devices to neutron irradiation may be performed in a manner that is repeatable and which will allow comparison to be made of data taken at different facilities. 5.3 For semiconductors other than silicon and gallium arsenide, applicable validated 1-MeV damage functions are not currently available in codified national standards. In the absence of a validated 1-MeV damage function, the non-ionizing energy loss (NIEL), see Practice E3084 , or the displacement kerma, as a function of incident neutron energy, normalized to the response in the 1-MeV energy region, may be used as an approximation. See Practice E722 for a description of the method used to determine the damage functions in Si and GaAs ( 3 ) .