BS EN 60749-6:2017旨在测试并确定对所有固态材料的影响 在不施加电应力的情况下在高温下存储的电子设备。这 试验通常用于确定储存期间时间和温度的影响 固态电子元件热激活失效方法和失效时间的条件 设备，包括非易失性存储器设备（数据保留故障机制）。这个测试 被认为是非破坏性的，但最好用于设备鉴定。如果是这样的话 如果设备用于交付，则需要对这种高加速应力测试的效果进行评估 评价的。使用Arrhenius方程对热激活失效机制进行建模 加速，以及选择试验温度和持续时间的指南 在IEC 60749-43中。交叉引用:IEC 60749-43:2017EN 60749-20（IEC 60749-20:2008）ASIEC 60749-20:2008EN 60749- 43:2017购买本文件时可获得的所有现行修订均包含在购买本文件中。

BS EN 60749-6:2017 is to test and determine the effect on all solid state electronic devices of storage at elevated temperature without electrical stress applied. This test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure methods and time-to-failure of solid state electronic devices, including non-volatile memory devices (data-retention failure mechanisms). This test is considered non-destructive but should preferably be used for device qualification. If such devices are used for delivery, the effects of this highly accelerated stress test will need to be evaluated.Thermally activated failure mechanisms are modelled using the Arrhenius equation for acceleration, and guidance on the selection of test temperatures and durations can be found in IEC 60749-43.Cross References:IEC 60749-43:2017EN 60749-20 (IEC 60749-20:2008) ASIEC 60749-20:2008EN 60749-43:2017All current amendments available at time of purchase are included with the purchase of this document.