本文件规定了结构模型及其相关参数、文件格式和拟合程序 用于通过使用临界尺寸成像来表征晶圆和光罩的临界尺寸（CD）值 通过基于模型的库（MBL）方法对扫描电子显微镜（CD-SEM）进行尺寸测量。这个 本方法适用于硅片上的栅极、光罩、单面等样品的线宽测定 孤立或密集的线条特征图案，尺寸小于10纳米。交叉引用:ISO/IEC指南98-3:2008 Ed 1ISO 23833:2013ISO 16700:2016ISO 22493:2014购买本文件时可获得的所有现行修订均包含在购买本文件中。

This document specifies the structure model with related parameters, file format and fitting procedure for characterizing critical dimension (CD) values for wafer and photomask by imaging with a critical dimension scanning electron microscope (CD-SEM) by the model-based library (MBL) method. The method is applicable to linewidth determination for specimen, such as, gate on wafer, photomask, single isolated or dense line feature pattern down to size of 10 nm.Cross References:ISO/IEC GUIDE 98-3:2008 Ed 1ISO 23833:2013ISO 16700:2016ISO 22493:2014All current amendments available at time of purchase are included with the purchase of this document.