ISO/TR 16268:2009规定了用于表面分析用途的工作参考材料（WoRM）中原子序数大于硅原子序数的离子注入分析物元素的areic剂量认证程序。WoRM是抛光的(或类似的表面光滑的)晶片(也称为主体)的形式，具有均匀的组成和50mm或更大的标称直径，其已经用标称一种化学元素同位素(也称为分析物)离子注入，标称剂量通常在1016原子/cm2至1013原子/cm2的范围内(即，半导体技术中主要关注的范围)。保留在WoRM晶片中的离子注入分析物的areic剂量相对于保留在离子注入晶片中的相同分析物的areic剂量进行认证。具有(优选认证的)二级参考材料(SeRM)状态的植入硅晶片。 提供了关于WoRM认证的概念和程序的信息。还描述了参考材料、比较测量和实际认证的要求。离子注入、离子注入剂量测定、波长色散X？射线荧光光谱和不可获得的SeRMs的未经认证的替代品在四个附录中提供。第五个附件详细说明了认证过程中出现的不确定性的来源和程度。

ISO/TR 16268:2009 specifies a procedure for the certification of the areic dose of an ion-implanted analyte element of atomic number larger than that of silicon retained in a working reference material (WoRM) intended for surface-analytical use. The WoRM is in the form of a polished (or similarly smooth-faced) wafer (also referred to as the host), of uniform composition and nominal diameter 50 mm or more, that has been ion-implanted with nominally one isotope of a chemical element (also referred to as the analyte), not already present in the host, to a nominal areic dose normally within the range 10¹⁶ atoms/cm² to 10¹³ atoms/cm² (i.e. the range of primary interest in semiconductor technology). The areic dose of the ion-implanted analyte retained in the WoRM wafer is certified against the areic dose of the same analyte retained in an ion-implanted silicon wafer having the status of a (preferably certified) secondary reference material (SeRM). Information is provided on the concept and the procedure for certification of the WoRM. There is also a description of the requirements for the reference materials, the comparative measurements and the actual certification. Supporting information on ion implantation, ion-implantation dosimetry, wavelength-dispersive X？ray fluorescence spectroscopy and non-certified substitutes for unobtainable SeRMs is provided in four annexes. Sources and magnitudes of uncertainties arising in the certification process are detailed in a fifth annex.