1.1 本试验方法涵盖将2N2222A硅双极晶体管用作中子能谱测定中的剂量测定传感器和1-MeV（Si）等效位移损伤注量监测器。 1.2 硅中的中子位移可以作为0.1至2.0 MeV范围内的中子谱传感器，并且可以在没有裂变箔的情况下作为替代品。它已应用于2×10的注量范围 12 牛顿/厘米 2. 至1×10 14 牛顿/厘米 2. 并且应该在1×10以下有用 15 牛顿/厘米 2. . 本试验方法详细说明了使用2N2222A晶体管部分测定中子谱时1-MeV（Si）等效注量信息的获取和使用。 1.3 该传感器通过传输技术直接测量硅1-MeV等效通量。 1.4 以国际单位制表示的数值应视为标准值。 本标准不包括其他计量单位。 1.5 本标准并非旨在解决与其使用相关的所有安全问题（如有）。本标准的用户有责任在使用前制定适当的安全、健康和环境实践，并确定监管限制的适用性。 1.6 本国际标准是根据世界贸易组织技术性贸易壁垒（TBT）委员会发布的《关于制定国际标准、指南和建议的原则的决定》中确立的国际公认标准化原则制定的。 ====意义和用途====== 5.1 为了使用测量的设备响应来预测设备在操作环境中的性能，必须知道中子测试频谱（实践 E1854 ). 通常，中子谱是使用一组传感器确定的，这些传感器的响应函数对被测装置（DUT）响应的中子能量区域敏感（指南 E721 ). 对于暴露在反应堆中子谱中的硅双极器件，该有效能量范围在0.01至10 MeV之间。一组典型的活化反应，缺乏来自核素的裂变反应，例如 235 U 237 Np，或 239 Pu对0.01到2mev之间的光谱的灵敏度很低。对于池式反应堆频谱，70%的DUT电子损伤响应可能在此范围内，因此其确定至关重要。 5.2 当在0.01至2 MeV能量范围内具有显著响应的剂量计（如裂变箔）不可用时，硅晶体管可以提供具有所需响应的剂量计，以定义该临界能量范围内的光谱。 当裂变箔是传感器组的一部分时，硅传感器提供该能量区域光谱形状的确认。 5.3 硅双极晶体管，如2N2222A型，价格低廉，比硼球中包含的裂变箔小，并且对中子谱中对现代硅电子器件的损坏很重要的一部分敏感。它们也可以直接用于阵列中，在空间上映射1-MeV（Si）等效位移损伤通量。本测试方法中描述了在读取晶体管增益衰减时要采取的一组适当步骤。 5.4 在实践中发现了硅的位移损伤函数的能量依赖性 E722 . 硅晶体管的大部分响应通常高于100 keV。

1.1 This test method covers the use of 2N2222A silicon bipolar transistors as dosimetry sensors in the determination of neutron energy spectra and as 1-MeV(Si) equivalent displacement damage fluence monitors. 1.2 The neutron displacement in silicon can serve as a neutron spectrum sensor in the range 0.1 to 2.0 MeV and can serve as a substitute when fission foils are not available. It has been applied in the fluence range between 2 × 10 12 n/cm 2 to 1 × 10 14 n/cm 2 and should be useful up to 1 × 10 15 n/cm 2 . This test method details the acquisition and use of 1-MeV(Si) equivalent fluence information for the partial determination of the neutron spectra by using 2N2222A transistors. 1.3 This sensor yields a direct measurement of the silicon 1-MeV equivalent fluence by the transfer technique. 1.4 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use. 1.6 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee. ====== Significance And Use ====== 5.1 The neutron test spectrum must be known in order to use a measured device response to predict the device performance in an operational environment (Practice E1854 ). Typically, neutron spectra are determined using a set of sensors with response functions sensitive over the neutron energy region to which the device under test (DUT) responds (Guide E721 ). For silicon bipolar devices exposed in reactor neutron spectra, this effective energy range is between 0.01 and 10 MeV. A typical set of activation reactions that lack fission reactions from nuclides such as 235 U, 237 Np, or 239 Pu, will have very poor sensitivity to the spectrum between 0.01 and 2 MeV. For a pool-type reactor spectrum, 70 % of the DUT electronic damage response may lie in this range making its determination of critical importance. 5.2 When dosimeters with a significant response in the 0.01 to 2 MeV energy region, such as fission foils, are unavailable, silicon transistors can provide a dosimeter with the needed response to define the spectrum in this critical energy range. When fission foils are part of the sensor set, the silicon sensor provides confirmation of the spectral shape in this energy region. 5.3 Silicon bipolar transistors, such as type 2N2222A, are inexpensive, smaller than fission foils contained in a boron ball, and sensitive to a part of the neutron spectrum important to the damage of modern silicon electronics. They also can be used directly in arrays to spatially map 1-MeV(Si) equivalent displacement damage fluence. The proper set of steps to take in reading the transistor-gain degradation is described in this test method. 5.4 The energy-dependence of the displacement damage function for silicon is found in Practice E722 . The major portion of the response for the silicon transistors will generally be above 100 keV.