IEC 60749-18:20 19作为IEC 60749-18:20 19 RLV提供，其中包含国际标准及其红线版本，显示了与上一版本相比技术内容的所有变化。IEC 60749-18:20 19提供了测试程序定义了测试封装半导体集成电路和分立半导体器件对钴-60(60Co)伽马射线源电离辐射（总剂量）效应的要求。可以使用其它合适的辐射源。本文件仅涉及稳态辐照，不适用于脉冲型辐照。它旨在用于军事和航空航天相关的应用。这是一个破坏性的测试。与上一版相比，此版本包括以下重大技术变更: -更新子条款，以更好地使测试方法与MIL保持一致-STD 883J，方法1019，包括使用增强的低剂量率灵敏度（ELDRS）测试； -增加参考书目，其中包括与该试验方法相关的ASTM标准。

IEC 60749-18:2019 is available as IEC 60749-18:2019 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.

IEC 60749-18:2019 provides a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 (60Co) gamma ray source. Other suitable radiation sources can be used. This document addresses only steady-state irradiations, and is not applicable to pulse type irradiations. It is intended for military- and aerospace-related applications. It is a destructive test. This edition includes the following significant technical changes with respect to the previous edition:
- updates to subclauses to better align the test method with MIL-STD 883J, method 1019, including the use of enhanced low dose rate sensitivity (ELDRS) testing;
- addition of a Bibliography, which includes ASTM standards relevant to this test method.