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现行 MIL MIL-PRF-19500/553F
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Semiconductor Device, Diode, Silicon, Schottky Barrier, Fast Recovery, Type 1N6391, JAN, JANTX, JANTXV, JANS, and JANHC 半导体器件 二极管 硅 肖特基势垒 快速恢复 1N6391型 JAN型 JANTX型 JANTXV型 JANS型和JANHC型
发布日期: 2014-02-25
本规范涵盖了硅快速恢复肖特基势垒二极管的性能要求,该二极管拟用作整流器恢复电路中的功率整流器,或用作功率开关应用中的反激二极管。根据MIL‰ÛÒPRF‰ÛÒ19500的规定,为每种封装设备类型提供四个级别的产品保证。按照MIL‰ÛÒPRF‰ÛÒ19500的规定,为每种未封装设备类型(模具)提供一级产品保证。
This specification covers the performance requirements for a silicon, fast recovery, schottky barrier diode, intended for use as a power rectifier in rectifier recovery circuits, or as a flyback diode in power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL‰ÛÒPRF‰ÛÒ19500. One level of product assurance is provided for each unencapsulated device type (die) as specified in MIL‰ÛÒPRF‰ÛÒ19500.
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发布单位或类别: 美国-美国军事规范和标准
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