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现行 MIL MIL-PRF-19500/355R Amendment 1(amendment incorporated)
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Transistor, Unitized Dual, NPN, Silicon, Types 2N2919, 2N2920, JAN, JANTX, JANTXV, JANS, JANHC and JANKC 晶体管 单元化双 NPN 硅 2N2919、2N2920、JAN、JANTX、JANTSV、JANS、JANHC和JANKC型
发布日期: 2013-12-09
本规范涵盖了作为一个双单元的两个电隔离、匹配的NPN辐射硬化硅晶体管的性能要求。为每个封装设备提供四个级别的产品保证(JAN、JANTX、JANTSV和JANS)。为每个未封装模具提供两个级别的产品保证(JANHC和JANKC)。针对JANTSV、JANS、JANHC和JANKC产品保证级别,提供了八个辐射级别(“M”、“D”、“P”、“L”、“R”、“F”、“G”和“H”)的辐射硬度保证(RHA)规定。
This specification covers the performance requirements for two electrically isolated, matched NPN radiation hardened silicon transistors as one dual unit. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV, and JANS). Two levels of product assurance are provided for each unencapsulated die (JANHC and JANKC). Provisions for radiation hardness assurance (RHA) to eight radiation levels ("M", "D", "P", "L", "R", "F", "G" and "H") are provided for JANTXV, JANS, JANHC, and JANKC product assurance levels.
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发布单位或类别: 美国-美国军事规范和标准
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