MIL MIL-M-38510/227 Notice 1-Inactivation 1-微型电路数字 NMOS 16384位电可擦除可编程只读存储器（EEPROM）单片硅-国家数字标准馆

现行 MIL MIL-M-38510/227 Notice 1-Inactivation 1

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MICROCIRCUITS, DIGITAL, NMOS, 16,384 BIT, ELECTRICALLY ERASABLE, PROGRAMMABLE READ-ONLY MEMORY (EEPROM), MONOLITHIC SILICON 微型电路数字 NMOS 16384位电可擦除可编程只读存储器（EEPROM）单片硅

发布日期： 1995-07-24

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发布单位或类别：美国-美国军事规范和标准

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研制信息

相似标准/计划/法规

现行

MIL MIL-M-38510/227 Notice 3-Validation 2

MICROCIRCUITS, DIGITAL, NMOS, 16,384 BIT, ELECTRICALLY ERASABLE, PROGRAMMABLE READ-ONLY MEMORY (EEPROM), MONOLITHIC SILICON
微型电路数字 NMOS 16384位电可擦除可编程只读存储器（EEPROM）单片硅

2006-01-31

现行

MIL MIL-M-38510/227 Notice 2-Validation 1

MICROCIRCUITS, DIGITAL, NMOS, 16,384 BIT, ELECTRICALLY ERASABLE, PROGRAMMABLE READ-ONLY MEMORY (EEPROM), MONOLITHIC SILICON
微型电路数字 NMOS 16384位电可擦除可编程只读存储器（EEPROM）单片硅

2001-04-26

现行

MIL MIL-M-38510/227

MICROCIRCUITS, DIGITAL, NMOS, 16,384 BIT, ELECTRICALLY ERASABLE, PROGRAMMABLE READ-ONLY MEMORY (EEPROM), MONOLITHIC SILICON
微电路数字 NMOS 16384位电可擦除可编程只读存储器（EEPROM）单片硅

1987-03-27

现行

MIL MIL-M-38510/228 Notice 3-Validation 2

MICROCIRCUITS, DIGITAL, NMOS 8K X 8 BIT, ELECTRICALLY ERASABLE, PROGRAMMABLE READ-ONLY MEMORY (EEPROM) MONOLITHIC SILICON
数字微电路 NMOS 8K X 8位电可擦除可编程只读存储器（EEPROM）单片硅

2006-01-31

现行

MIL MIL-M-38510/228 Notice 2-Validation 1

2001-04-26

现行

MIL MIL-M-38510/228

MICROCIRCUITS, DIGITAL, NMOS 8K X 8 BIT, ELECTRICALLY ERASABLE, PROGRAMMABLE READ-ONLY MEMORY (EEPROM) MONOLITHIC SILICON
微电路数字 NMOS 8K X 8位电可擦除可编程只读存储器（EEPROM）单片硅

1987-09-22