IEC 63068的本部分提供了使用光致发光的定义和指南 商用4H-SiC（碳化硅）外延片中生长缺陷的检测 薄饼。此外，本文件举例说明了光致发光图像和发射 光谱，用于检测和分类SiC同质外延晶片中的缺陷。购买本文件时可获得的所有当前修订均包含在购买本文件中。

This part of IEC 63068 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.All current amendments available at time of purchase are included with the purchase of this document.