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现行 IEC 60747-9:2019
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Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs) 半导体器件第9部分:分立器件绝缘栅双极晶体管
发布日期: 2019-11-13
IEC 60747-9:20 19规定了绝缘栅双极晶体管(IGBT)的术语、字母符号、基本额定值和特性、额定值验证和测量方法的产品特定标准。 与上一版相比,第三版包含以下重大技术变更: 增加了反向阻断型IGBT及其相关技术内容; 增加了反导IGBT及其相关技术内容; 前一版的某些部分已被修改、合并或删除。
IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
This third edition includes the following significant technical changes with respect to the previous edition:
  1. reverse-blocking IGBT and its related technical contents have been added;
  2. reverse-conducting IGBT and its related technical contents have been added;
  3. some parts of the previous edition have been amended, combined or deleted.
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归口单位: TC 47/SC 47E
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