首页 馆藏资源 舆情信息 标准服务 科研活动 关于我们
现行 IEEE C62.35-2010
到馆阅读
收藏跟踪
购买正版
IEEE Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components 雪崩结半导体浪涌保护装置组件的IEEE标准试验方法
发布日期: 2010-08-31
本标准适用于双端或多端硅雪崩击穿二极管(ABD),它是浪涌保护器组件(SPDC)的一种。在本文件中,这些设备将被称为ABDs。ABDs限制(钳位)瞬态电压并转移瞬态电流。本标准包含 术语、符号和定义,并提供验证额定值和测量设备特性的试验方法。还提供了使用条件和故障模式。本标准也适用于具有类似V-I特性的其他硅浪涌保护装置组件。
This standard applies to two terminal or multiple terminal silicon avalanche breakdown diodes (ABD), which are one type of surge protective device component (SPDC). In this document, these devices will be called ABDs. ABDs limit (clamp) transient voltages and divert transient currents. This standard contains terms, symbols and definitions, and provides test methods for verifying ratings and measuring device characteristics. Service conditions and failure mode are also provided. This standard may also apply to other silicon surge protective device components with similar V-I characteristics.
分类信息
关联关系
研制信息
相似标准/计划/法规