1.1 本指南介绍了建立适当的测试序列和数据分析程序的背景和指南，以确定剂量率低于300 rd（SiO）的微电子设备的电离辐射（总剂量）硬度 2. )/s、 这些测试和分析将有助于确定被测设备满足特定硬度要求的能力，或评估在一系列辐射环境中使用的零件。 1.2 提出的方法和指南将适用于硅基MOS和双极分立器件及集成电路的表征、鉴定和批量验收。它们将适用于电子和光子辐照效应的处理。 1.3 本指南提供了一个框架，用于根据待测试零件的一般特性以及这些零件的辐射硬度要求或目标选择测试顺序。 1.4 本指南提供了最小化测试方法的保守性质和最小化所需测试工作之间的权衡。 1.5 确定有效且经济的硬度测试通常需要几种决定。通常必须作出的决定的部分列举如下: 1.5.1 确定需要执行设备特性描述- 在某些情况下，采用某种最坏情况下的测试方案可能更合适，该方案不需要器件特性。在其他情况下，确定剂量率对装置辐射灵敏度的影响可能最有效。必要时，还必须确定此类特征的适当详细程度。 1.5.2 确定一种有效策略，以最小化辐照剂量率对测试结果的影响- 某些类型设备的辐射测试结果对测试中应用的辐射剂量率相对不敏感。 相比之下，许多MOS器件和一些双极器件对剂量率具有显著的敏感性。将讨论几种用于管理测试结果剂量率敏感性的不同策略。 1.5.3 选择有效的测试方法- 将讨论有效测试方法的选择。 1.6 低剂量要求- 当所需硬度为100 rd（SiO）时，无需为鉴定或批量验收目的对MOS和双极微电子器件进行硬度测试 2. )或更低。 1.7 来源- 本指南将涵盖使用光子源辐射进行设备测试时产生的影响，例如 60 Coγ辐射器， 137 铯γ辐射器和低能（约10 keV）X射线源。偶尔会使用其他测试辐射源，如直线加速器、范德格拉夫源、Dymnamitrons、SEMs和闪光X射线源，但不在本指南的范围内。 1.8 位移损伤效应也不在本指南的范围内。 1.9 以国际单位制表示的数值应视为标准。 1.10 本国际标准是根据世界贸易组织技术性贸易壁垒（TBT）委员会发布的《关于制定国际标准、指南和建议的原则的决定》中确立的国际公认标准化原则制定的。 ====意义和用途====== 5.1 空间、军事和核动力系统中使用的电子电路可能暴露于不同水平的电离辐射。对于此类电路的设计和制造而言，必须有可用的测试方法，以确定此类系统中使用的组件的易损性或硬度（非易损性的测量）。 5.2 一些制造商目前正在销售具有保证硬度等级的半导体零件。本指南的使用为标准化鉴定和验收测试提供了基础。

1.1 This guide presents background and guidelines for establishing an appropriate sequence of tests and data analysis procedures for determining the ionizing radiation (total dose) hardness of microelectronic devices for dose rates below 300 rd(SiO 2 )/s. These tests and analysis will be appropriate to assist in the determination of the ability of the devices under test to meet specific hardness requirements or to evaluate the parts for use in a range of radiation environments. 1.2 The methods and guidelines presented will be applicable to characterization, qualification, and lot acceptance of silicon-based MOS and bipolar discrete devices and integrated circuits. They will be appropriate for treatment of the effects of electron and photon irradiation. 1.3 This guide provides a framework for choosing a test sequence based on general characteristics of the parts to be tested and the radiation hardness requirements or goals for these parts. 1.4 This guide provides for tradeoffs between minimizing the conservative nature of the testing method and minimizing the required testing effort. 1.5 Determination of an effective and economical hardness test typically will require several kinds of decisions. A partial enumeration of the decisions that typically must be made is as follows: 1.5.1 Determination of the Need to Perform Device Characterization— For some cases it may be more appropriate to adopt some kind of worst case testing scheme that does not require device characterization. For other cases it may be most effective to determine the effect of dose-rate on the radiation sensitivity of a device. As necessary, the appropriate level of detail of such a characterization also must be determined. 1.5.2 Determination of an Effective Strategy for Minimizing the Effects of Irradiation Dose Rate on the Test Result— The results of radiation testing on some types of devices are relatively insensitive to the dose rate of the radiation applied in the test. In contrast, many MOS devices and some bipolar devices have a significant sensitivity to dose rate. Several different strategies for managing the dose rate sensitivity of test results will be discussed. 1.5.3 Choice of an Effective Test Methodology— The selection of effective test methodologies will be discussed. 1.6 Low Dose Requirements— Hardness testing of MOS and bipolar microelectronic devices for the purpose of qualification or lot acceptance is not necessary when the required hardness is 100 rd(SiO 2 ) or lower. 1.7 Sources— This guide will cover effects due to device testing using irradiation from photon sources, such as 60 Co γ irradiators, 137 Cs γ irradiators, and low energy (approximately 10 keV) X-ray sources. Other sources of test radiation such as linacs, Van de Graaff sources, Dymnamitrons, SEMs, and flash X-ray sources occasionally are used but are outside the scope of this guide. 1.8 Displacement damage effects are outside the scope of this guide, as well. 1.9 The values stated in SI units are to be regarded as the standard. 1.10 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee. ====== Significance And Use ====== 5.1 Electronic circuits used in space, military, and nuclear power systems may be exposed to various levels of ionizing radiation. It is essential for the design and fabrication of such circuits that test methods be available that can determine the vulnerability or hardness (measure of nonvulnerability) of components to be used in such systems. 5.2 Some manufacturers currently are selling semiconductor parts with guaranteed hardness ratings. Use of this guide provides a basis for standardized qualification and acceptance testing.