1.1 本指南概述了俄歇电子能谱（AES）中不需要的电子束效应的起源和表现。 1.2 本文提供了一些关于最有可能产生这些影响的电子束参数的一般准则，并就如何将其最小化提出了建议。 1.3 确定了最有可能表现出不必要的电子束效应的一般材料类别。此外，还提供了一些观察到受到电子损伤效应的特定材料的列表。 1.4 概述了一种在常规AES分析中确定这些影响的存在和程度的简单方法。 1.5 以国际单位制表示的数值应视为标准值。本标准不包括其他计量单位。 1.6 本标准并非旨在解决与其使用相关的所有安全问题（如有）。 本标准的用户有责任在使用前制定适当的安全、健康和环境实践，并确定监管限制的适用性。 1.7 本国际标准是根据世界贸易组织技术性贸易壁垒（TBT）委员会发布的《关于制定国际标准、指南和建议的原则的决定》中确立的国际公认标准化原则制定的。 ====意义和用途====== 4.1 在AES中使用电子束激发时，入射电子束可以与样品材料相互作用，引起物理和化学变化。一般来说，这些影响是AES分析的障碍，因为它们会导致局部样本修改 ( 1- 4. ) . 5. 4.2 对于导电性较差的样品，电子束可以刺激样品表面局部电荷的发展。 这种影响阻碍了AES分析，因为与电荷相关的电位可能会对俄歇数据的完整性产生不利影响，或使俄歇数据收集困难 ( 5. , 6. ) .

1.1 This guide outlines the origins and manifestations of unwanted electron beam effects in Auger electron spectroscopy (AES). 1.2 Some general guidelines are provided concerning the electron beam parameters which are most likely to produce these effects and suggestions are offered on how to minimize them. 1.3 General classes of materials are identified which are most likely to exhibit unwanted electron beam effects. In addition, a tabulation of some specific materials which have been observed to undergo electron damage effects is provided. 1.4 A simple method is outlined for establishing the existence and extent of these effects during routine AES analysis. 1.5 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use. 1.7 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee. ====== Significance And Use ====== 4.1 When electron beam excitation is used in AES, the incident electron beam can interact with the specimen material causing physical and chemical changes. In general, these effects are a hindrance to AES analysis because they cause localized specimen modification ( 1- 4 ) . 5 4.2 With specimens that have poor electrical conductivity the electron beam can stimulate the development of localized charge on the specimen surface. This effect is a hindrance to AES analysis because the potentials associated with the charge can either adversely affect the integrity of Auger data or make Auger data collection difficult ( 5 , 6 ) .