IEC 60749的这一部分建立了一个程序，用于测量带有存储器的半导体器件在受到高能粒子（如阿尔法辐射）时的软错误敏感性。描述了两个试验；使用阿尔法辐射源和（未加速的）实时系统测试的加速测试，其中在自然发生的辐射条件下产生任何误差，可能是阿尔法辐射或其他辐射，如中子。为了完整地描述带存储器的集成电路的软错误能力，必须使用额外的测试方法测试该设备的宽高能谱和热中子。本试验方法适用于任何类型的带存储设备的集成电路。

This part of IEC 60749 establishes a procedure for measuring the soft error susceptibility of semiconductor devices with memory when subjected to energetic particles such as alpha radiation. Two tests are described; an accelerated test using an alpha radiation source and an (unaccelerated) real-time system test where any errors are generated under conditions of naturally occurring radiation which can be alpha or other radiation such as neutron. To completely characterize the soft error capability of an integrated circuit with memory, the device must be tested for broad high energy spectrum and thermal neutrons using additional test methods. This test method may be applied to any type of integrated circuit with memory device.