本文件规定了几种测量（100）和（111）硅片表面氧化层厚度的方法，当使用X射线光电子能谱测量时，氧化层厚度相当于二氧化硅厚度。它仅适用于平坦、抛光的样品，以及包含Al或Mg X射线源、允许定义光电子发射角的样品台和带有可限制为小于6°锥半角的输入透镜的光谱仪的仪器。对于厚度在1 nm到8 nm之间的热氧化物，使用本文件中描述的最佳方法，95%置信水平下的不确定度通常为2%左右，最佳情况下为1%左右。给出了一种更简单的方法，其不确定性稍差，但通常足够。

This document specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished samples and for instruments that incorporate an Al or Mg X-ray source, a sample stage that permits defined photoelectron emission angles and a spectrometer with an input lens that can be restricted to less than a 6° cone semi-angle. For thermal oxides in the range 1 nm to 8 nm thickness, using the best method described in this document, uncertainties, at a 95 % confidence level, could typically be around 2 % and around 1 % at optimum. A simpler method is also given with slightly poorer, but often adequate, uncertainties.