本文件规定了测定碳化硅中多晶型及其比率的试验方法 （SiC）使用紫外光致发光（UVPL）成像的晶片或大块晶体。碳化硅的范围是 仅限于掺杂氮和硼的半导体SiC，具有深受主能级和浅受主能级 捐赠者水平。本文件中讨论的SiC晶片或块体晶体通常显示 电阻率范围为10-3欧姆·厘米至10-2欧姆·厘米，适用于电力电子设备 设备。购买本文件时可获得的所有当前修订均包含在购买本文件中。

This document specifies a test method for determining the polytypes and their ratios in silicon carbide (SiC) wafers or bulk crystals using ultraviolet photoluminescence (UVPL) imaging. The range of SiC is limited to semiconductor SiC doped with nitrogen and boron to have a deep acceptor level and a shallow donor level, respectively. The SiC wafers or bulk crystals discussed in this document typically show electrical resistivities ranging from 10—3ohm · cm to 10—2ohm · cm, applicable to power electronic devices.All current amendments available at time of purchase are included with the purchase of this document.