Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6766 and 1N6767, 1N6766R and 1N6767R, JAN, JANTX, JANTXV, and JANS
半导体器件 二极管 硅 功率整流器 双 共阴极或阳极中心抽头 超快 1N6766和1N6767型 1N6766R和1N6767R型 JAN JANTX JANTSV和JANS
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Four levels of product assurance are provided for oath device type as specified in MIL-PRF-19500.