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现行 MIL MIL-PRF-19500/643C Notice 1-Validation 1
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Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6766 and 1N6767, 1N6766R and 1N6767R, JAN, JANTX, JANTXV, and JANS 半导体器件 二极管 硅 功率整流器 双 共阴极或阳极中心抽头 超快 1N6766和1N6767型 1N6766R和1N6767R型 JAN JANTX JANTSV和JANS
发布日期: 2016-11-03
本规范涵盖了中心抽头配置中的硅双超快功率整流二极管的性能要求。按照MIL-PRF-19500的规定,宣誓装置类型提供了四个级别的产品保证。
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Four levels of product assurance are provided for oath device type as specified in MIL-PRF-19500.
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发布单位或类别: 美国-美国军事规范和标准
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现行
MIL MIL-PRF-19500/643C Amendment 1
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