首页 馆藏资源 舆情信息 标准服务 科研活动 关于我们
现行 MIL MIL-PRF-19500/302C Notice 4-Validation 4
到馆提醒
收藏跟踪
购买正版
Semiconductor Device, Transistor, NPN, Silicon, Low-Power, Types 2N2708, JAN 半导体器件 晶体管 NPN 硅 低功率 2N2708型 JAN
发布日期: 2018-11-09
分类信息
发布单位或类别: 美国-美国军事规范和标准
关联关系
研制信息
相似标准/计划/法规
现行
MIL MIL-PRF-19500/302C Notice 3-Validation
Semiconductor Device, Transistor, NPN, Silicon, Low-Power, Types 2N2708, JAN
半导体器件 晶体管 NPN 硅 低功率 2N2708型 JAN
2013-12-05
现行
MIL MIL-S-19500/2B Notice 4-Validation
Semiconductor Device, Transistor, NPN, Silicon, Low-Power Types 2N117, 2N118 and 2N119
半导体器件 晶体管 NPN 硅 低功率2N117、2N118和2N119型
2017-05-05
现行
SJ 50033/90-1995
半导体分立器件 3DK106型NPN硅小功率开关晶体管详细规范
Semiconductor discrete devices--Detail specification for Type 3DK106 NPN silicon low-power switching transistor
1995-05-25
现行
SJ 50033/82-1995
半导体分立器件 3DK100型NPN硅小功率开关晶体管详细规范
Semiconductor discrete devices--Detail specification for Type 3DK100 NPN silicon low-power switching transistor
1995-05-25
现行
SJ/T 1838-2016
半导体分立器件 3DK29型NPN硅小功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for silicon NPN low power switching transistor type 3DK29
2016-04-05
现行
SJ/T 1832-2016
半导体分立器件 3DK102型NPN硅小功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for silicon NPN low power switching transistor type 3DK102
2016-04-05
现行
SJ/T 1830-2016
半导体分立器件 3DK101型NPN硅小功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for silicon NPN low power switching transistor type 3DK101
2016-04-05
现行
SJ 20057-1992
半导体分立器件 3DK104型NPN硅小功率开关晶体管详细规范
Semiconductor discrete device--Detail specification for silicon NPN low power switching transistor of Type 3DK104
1992-11-19
现行
SJ 20058-1992
半导体分立器件 3DK105型NPN硅小功率开关晶体管详细规范
Semiconductor discrete device--Detail specification for silicon NPN low power switching transistor of Type 3DK105
1992-11-19
现行
SJ 20056-1992
半导体分立器件 3DK103型NPN硅小功率开关晶体管详细规范
Semiconductor discrete device--Detail specification for silicon NPN low power switching transistor of Type 3DK103
1992-11-19
现行
SJ 20055-1992
半导体分立器件 3DK102型NPN硅小功率开关晶体管详细规范
Semiconductor discrete device--Detail specification for silicon NPN low power switching transistor of Type 3DK102
1992-11-19
现行
SJ 20054-1992
半导体分立器件 3DK101型NPN硅小功率开关晶体管详细规范
Semiconductor discrete device--Detail specification for silicon NPN low power switching transistor of Type 3DK101
1992-11-19
现行
SJ/T 1831-2016
半导体分立器件 3DK28型NPN硅小功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for silicon NPN low power switching transistor type 3DK28
2016-04-05
现行
SJ/T 1833-2016
半导体分立器件 3DK103型NPN硅小功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for silicon NPN low power swithcing transistor type 3DK103
2016-04-05
现行
SJ/T 1826-2016
半导体分立器件 3DK100型NPN硅小功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for silicon NPN low power switching transistor type 3DK100
2016-04-05
现行
SJ/T 1834-2016
半导体分立器件 3DK104型NPN硅小功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for silicon NPN low power switching transistor type 3DK104
2016-04-05
现行
SJ/T 1839-2016
半导体分立器件 3DK108型NPN硅小功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for silicon NPN low power switching transistor type 3DK108
2016-04-05
现行
SJ 20060-1992
半导体分立器件 3DG120型NPN硅高频小功率晶体管详细规范
Semiconductor discrete device--Detail specification for silicon NPN high-frequency low power transistor of Type 3DG120
1992-11-19
现行
SJ 20059-1992
半导体分立器件 3DG111型NPN硅高频小功率晶体管详细规范
Semiconductor discrete device--Detail specification for silicon NPN high-frequency low power transistor of Type 3DG111
1992-11-19
现行
MIL MIL-S-19500/31C
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW POWER TYPE 2N341 (SUPERSEDING MIL-S-19500/31B)
半导体器件 晶体管 NPN 硅 低功率2N341型(取代MIL-S-19500/31B)
1972-06-01