IEC 63068-1:2019-半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第1部分:缺陷分类-国家数字标准馆

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Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects 半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第1部分:缺陷分类

发布日期： 2019-01-30

IEC？63068-1:2019（E）给出了生长态4H-SiC（碳化硅）外延层中缺陷的分类。缺陷根据其晶体结构进行分类，并通过包括亮场OM（光学显微镜）、PL（光致发光）和XRT（X射线形貌）图像在内的无损检测方法进行识别。

IEC？63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.

分类信息

发布单位或类别：国际组织-国际电工委员会

ICS分类： 31.080.99半导体分立器件 - 其他半导体分立器件

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研制信息

归口单位： TC 47

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