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现行 IEEE 300-1988
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IEEE Standard Test Procedures for Semiconductor Charged-Particle Detectors IEEE半导体带电粒子探测器的标准试验程序
发布日期: 1988-12-29
本标准适用于用于带电粒子检测和高分辨率光谱分析的半导体辐射探测器。所描述的测量技术选择为所有带电粒子探测器的制造商和用户随时可用。由于方法过于复杂或需要设备(如粒子加速器),可能不容易获得,因此未包括一些优越的技术。 ANSI/IEEE Std 301-1988中描述了相关放大器和前置放大器的测试程序
This standard applies to semiconductor radiation detectors that are used for the detection and high-resolution spectroscopy of charged particles. The measurement techniques described were selected to be readily available to all manufacturers and users of charged-particle detectors. Some superior techniques are not included because the methods are too complex or require equipment (such as particle accelerators) which may not be readily available. Test procedures for the associated amplifiers and preamplifiers are described in ANSI/IEEE Std 301-1988
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