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现行 SJ 50033/27-1994
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半导体分立器件 2EC600系列砷化镓变容二极管详细规范 Semiconductor discrete device--Detail specification for GaAs varactor diodes for 2EC600 series
发布日期: 1994-09-30
实施日期: 1994-12-01
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现行
SJ 50033/22-1994
半导体分立器件 2CC51E型硅电调变容二极管详细规范
Semiconductor discrete device--Detail specification for silicon tuning varactor diode for type 2CC51E
1994-09-30
现行
SJ 50033/42-1994
半导体分立器件 CS0467型砷化镓微波场效应晶体管详细规范
Semiconductor discrete device--Detail specification for type CS0467 GaAs microwave FET
1994-09-30
现行
SJ 50033/78-1995
半导体分立器件 CS0464型砷化镓微波场效应晶体管详细规范
Semiconductor discrete devices--Detail specification for Type CS0464 GaAs microwave FET
1995-05-25
现行
SJ 50033/81-1995
半导体分立器件 CS0524型砷化镓微波功率场效应晶体管详细规范
Semiconductor discrete devices--Detail specification for Type CS0524 GaAs microwave power FET
1995-05-25
现行
SJ 50033/80-1995
半导体分立器件 CS0513型砷化镓微波功率场效应晶体管详细规范
Semiconductor discrete devices--Detail specification for Type CS0513 GaAs microwave power FET
1995-05-25
现行
SJ 50033/79-1995
半导体分立器件 CS0536型砷化镓微波功率场效应晶体管详细规范
Semiconductor discrete devices--Detail specification for Type CS0536 GaAs microwave power FET
1995-05-25
现行
SJ 50033/29-1994
半导体分立器件 EK20型砷化镓高速开关组件详细规范
Semiconductor discrete device--Detail specification for GaAs high-speed switching assembly for type EK20
1994-09-30
现行
SJ 50033/141-1999
半导体分立器件2EK150型砷化镓高速开关二极管详细规范
Semiconductor discrete devices Detail specification for type 2EK150 GaAs high speed switching diode
1999-11-10
现行
SJ 50033.51-1994
半导体分立器件CS0558型砷化镓微波双栅场效应晶体管详细规范
Semiconductor discreted devices Detail specification for type CS0558 GaAs microwave dual gate FET
1994-09-30
现行
SJ 50033.54-1994
半导体分立器件CS0532型砷化镓微波功率场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS0532 GaAs microwave power field effect transistor
1994-09-30
现行
SJ 50033.52-1994
半导体分立器件CS0529型砷化镓微波功率场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS0529 GaAs microwave power field effect transistor
1994-09-30
现行
SJ 50033.53-1994
半导体分立器件CS0530、CS0531型砷化镓微波功率场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS0530 and CS0531 GaAs microwave power field effect transistor
1994-09-30
现行
SJ 50033/106-1996
半导体分立器件CS203型砷化镓微波低噪声场效应晶体管详细规范
Semiconductor discrete device Detail specification for Type CS203 GaAs microwave Low noise field effect transistor
1996-08-30
现行
SJ 50033/30-1994
半导体分立器件 3DD155型功率晶体管详细规范
Semiconductor discrete device--Detail specification for type 3DD155 power transistor
1994-09-30
现行
SJ 50033/28-1994
半导体分立器件 2CV334、2CV3338型微带混频二极管详细规范
Semiconductor discrete device--Detail specification for stripline mixer diodes for 2CV334,2CV3338
1994-09-30
现行
SJ 50033/107-1996
半导体分立器件2EY621、2EY622、2EY623型体效应二极管详细规范
Semiconductor discrete device Detail specification for Gunn diodes for type 2EY621,2EY622,2EY623
1996-08-30
现行
SJ 50033/37-1994
半导体分立器件 3DD164型功率晶体管详细规范
Semiconductor discrete device--Detail specification for type 3DD164 power transistor
1994-09-30
现行
SJ 50033/36-1994
半导体分立器件 3CD050型功率晶体管详细规范
Semiconductor discrete device--Detail specification for type 3CD050 power transistor
1994-09-30
现行
SJ 20183-1992
半导体分立器件 3DD6型功率晶体管详细规范
Semiconductor discrete device--Detail specification for Type 3DD6 power transistor
1992-11-19
现行
SJ 50033/108-1996
半导体分立器件2EY5671、2EY5672型体效应二极管详细规范
Semiconductor discrete device Detail specification for Gunn diodes for type 2EY5671,2EY5672
1996-08-30