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现行 IEC TS 62607-8-3:2023
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Nanomanufacturing - Key control characteristics - Part 8-3: Nano-enabled metal-oxide interfacial devices - Analog resistance change and resistance fluctuation: Electrical resistance measurement 纳米制造.关键控制特性.第8-3部分:纳米金属氧化物界面器件.模拟电阻变化和电阻波动:电阻测量
发布日期: 2023-10-20
IEC TS 62607-8-3:20 23 IEC 62607的这一部分是一项技术规范,规定了确定关键控制特性的测量协议 -模拟电阻变化,以及 -电阻波动 对于纳米使能的金属-氧化物界面器件 -电阻测量。 在金属-氧化物界面器件中测量作为所施加电压脉冲函数的模拟电阻变化。使用参数拟合来评估电导变化与脉冲数的关系中的线性。在拟合过程中同时计算阻力波动的参数。 -该方法适用于评估由金属-氧化物界面装置组成的计算装置,例如积-和电路,其将学习过程记录为模拟电阻变化。
IEC TS 62607-8-3:2023 This part of IEC 62607, which is a Technical Specification, specifies a measurement protocol to determine the key control characteristics
- analogue resistance change, and
- resistance fluctuation
for nano-enabled metal-oxide interfacial devices by
- electrical resistance measurement.
Analogue resistance change as a function of applied voltage pulse is measured in metal-oxide interfacial devices. The linearity in the relationship of the variation of conductance and the pulse number is evaluated using the parameter fitting. The parameter of the resistance fluctuation is simultaneously computed in the fitting process.
- This method is applicable for evaluating computing devices composed of the metal-oxide interfacial device, for example, product-sum circuits, which record the learning process as the analogue resistance change.
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归口单位: TC 113
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