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现行 GB/T 249-2017
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半导体分立器件型号命名方法 The rule of type designation for discrete semiconductor devices
发布日期: 2017-05-12
实施日期: 2017-12-01
本标准规定了半导体分立器件型号命名方法的组成原则、组成部分的符号及其意义。本标准适用于各种半导体分立器件
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相似标准/计划/法规
现行
SJ 50033/30-1994
半导体分立器件 3DD155型功率晶体管详细规范
Semiconductor discrete device--Detail specification for type 3DD155 power transistor
1994-09-30
现行
SJ 50033/107-1996
半导体分立器件2EY621、2EY622、2EY623型体效应二极管详细规范
Semiconductor discrete device Detail specification for Gunn diodes for type 2EY621,2EY622,2EY623
1996-08-30
现行
SJ 50033/37-1994
半导体分立器件 3DD164型功率晶体管详细规范
Semiconductor discrete device--Detail specification for type 3DD164 power transistor
1994-09-30
现行
SJ 50033/36-1994
半导体分立器件 3CD050型功率晶体管详细规范
Semiconductor discrete device--Detail specification for type 3CD050 power transistor
1994-09-30
现行
SJ 20183-1992
半导体分立器件 3DD6型功率晶体管详细规范
Semiconductor discrete device--Detail specification for Type 3DD6 power transistor
1992-11-19
现行
SJ 50033/108-1996
半导体分立器件2EY5671、2EY5672型体效应二极管详细规范
Semiconductor discrete device Detail specification for Gunn diodes for type 2EY5671,2EY5672
1996-08-30
现行
IEC 60191-1-2018
Mechanical standardization of semiconductor devices - Part 1: General rules for the preparation of outline drawings of discrete devices
半导体器件的机械标准化 - 第1部分:分立器件外形图准备的一般规则
2018-01-23
现行
SJ 20072-1992
半导体分立器件 GH24、GH25和GH26型半导体光耦合器详细规范
Semiconductor discrete device--Detail specification for semiconductor opto-couplers for Type GH24,GH25 and GH26
1992-11-19
现行
SJ 50033/32-1994
半导体分立器件 3DK312型功率开关晶体管详细规范
Semiconductor discrete device--Detail specification for type 3DK312 power switching transistor
1994-09-30
现行
SJ 20274-1993
半导体分立器件2CK84型硅开关二极管详细规范
Semiconductor discrete devices Detail specificion for silicon switching diode for type 2CK84
1993-05-11
现行
SJ 50033/153-2002
半导体分立器件 2CK141型微波开关二极管 详细规范
Semiconductor discrete devices Detail specification for type 2CK141 microwave switch diode
2002-10-30
现行
SJ 50033/152-2002
半导体分立器件 2CK140型微波开关二极管 详细规范
Semiconductor discrete devices Detail specification for type 2CK140 microwave switch diode
2002-10-30
现行
SJ 20170-1992
半导体分立器件 3DK37型功率开关晶体管详细规范
Semiconductor discrete device--Detail specification for Type 3DK37 power switching transistor
1992-11-19
现行
SJ 20169-1992
半导体分立器件 3DK36型功率开关晶体管详细规范
Semiconductor discrete device--Detail specification for Type 3DK36 power switching transistor
1992-11-19
现行
SJ 50033.56-1994
半导体分立器件2CK85型硅开关二极管详细规范
Semiconductor discrete device Detail specification for type 2CK85 silicon switching diode
1994-09-30
现行
SJ 50033.55-1994
半导体分立器件2CK82型硅开关二极管详细规范
Semiconductor discrete device Detail specification for type 2CK82 silicon switching diode
1994-09-30
现行
SJ 50033.47-1994
半导体分立器件2CZ117型硅整流二极管详细规范
Semiconductor discrete device Detail specification for type 2CZ117 silicon rectifier diode
1994-09-30
现行
SJ 50033.46-1994
半导体分立器件2CZ59型硅整流二极管详细规范
Semiconductor discrete device Detail specification for type 2CZ59 silicon rectifier diode
1994-09-30
现行
SJ 50033.45-1994
半导体分立器件2CZ58型硅整流二极管详细规范
Semiconductor discrete device Detail specification for type 2CZ58 silicon rectifier diode
1994-09-30
现行
SJ 50033/42-1994
半导体分立器件 CS0467型砷化镓微波场效应晶体管详细规范
Semiconductor discrete device--Detail specification for type CS0467 GaAs microwave FET
1994-09-30