MIL MIL-M-38510/657A Notice 2-Validation 2-微电路数字高速CMOS 缓冲门单片硅-国家数字标准馆

现行 MIL MIL-M-38510/657A Notice 2-Validation 2

到馆提醒

收藏跟踪

购买正版

Microcircuits, Digital, High-Speed CMOS, Buffer Gates, Monolithic Silicon 微电路数字高速CMOS 缓冲门单片硅

发布日期： 2015-12-03

本规范涵盖了单片硅、高速CMOS、逻辑微电路的详细要求。提供了两种产品保证等级以及外壳轮廓和铅饰面的选择，并反映在完整的零件或识别号（PIN）中。对于该产品，MIL-M-38510的要求已被MIL-PRF-38535取代（见6.3）。

This specification covers the detail requirements for monolithic silicon, high speed CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete Part or Identifying Number (PIN). For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 (see 6.3).

分类信息

发布单位或类别：美国-美国军事规范和标准

关联关系

研制信息

相似标准/计划/法规

MIL MIL-M-38510/657A Notice 1-Validation 1

Microcircuits, Digital, High-Speed CMOS, Buffer Gates, Monolithic Silicon
微电路数字高速CMOS 缓冲门单片硅

MIL MIL-M-38510/657A Notice 3-Validation 3

Microcircuits, Digital, High-Speed CMOS, Buffer Gates, Monolithic Silicon
微电路数字高速CMOS 缓冲门单片硅

MIL MIL-M-38510/657A

MICROCIRCUITS, DIGITAL, HIGH-SPEED CMOS, BUFFER GATES, MONOLITHIC SILICON
微电路、数字、高速CMOS、缓冲门、单片硅

MIL DESC 5962-91513

MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, AND-OR-INVERT GATES, MONOLITHIC SILICON
微电路、数字、高速CMOS和/或反转门、单片硅

MIL MIL-M-38510/652B Notice 1-Validation 1

Microcircuits, Digital, High-Speed Cmos, and Gates, or Gates, Monolithic Silicon, Positive Logic
微电路数字高速Cmos和门或门单片硅正逻辑

MIL MIL-M-38510/652B Notice 3-Validation 3

Microcircuits, Digital, High-Speed Cmos, and Gates, or Gates, Monolithic Silicon, Positive Logic
微电路数字高速CMOS和门或门单片硅正逻辑

MIL MIL-M-38510/652B Notice 2-Validation 2

Microcircuits, Digital, High-Speed Cmos, and Gates, or Gates, Monolithic Silicon, Positive Logic
微电路数字高速Cmos和门或门单片硅正逻辑

MIL MIL-M-38510/657 Amendment 5

MICROCIRCUITS, DIGITAL, HIGH SPEED, CMOS, BUFFER GATES, MONOLITHIC SILICON(S/S BY MIL-M-38510/657A)
微型电路数字高速 CMOS 缓冲门单片硅（S/S BY MIL-M-38510/657A）

MIL MIL-M-38510/657 Amendment 6

MICROCIRCUITS, DIGITAL, HIGH SPEED, CMOS, BUFFER GATES, MONOLITHIC SILICON(S/S BY MIL-M-38510/657A)
微型电路数字高速 CMOS 缓冲门单片硅（S/S BY MIL-M-38510/657A）

MIL MIL-M-38510/657 Notice 1-Inactivation

MICROCIRCUITS, DIGITAL, HIGH SPEED, CMOS, BUFFER GATES, MONOLITHIC SILICON(S/S BY MIL-M-38510/657A)
微型电路数字高速 CMOS 缓冲门单片硅（S/S BY MIL-M-38510/657A）

MIL MIL-M-38510/657 Amendment 1

MICROCIRCUITS, DIGITAL, HIGH SPEED, CMOS, BUFFER GATES, MONOLITHIC SILICON(S/S BY MIL-M-38510/657A)
微型电路数字高速 CMOS 缓冲门单片硅（S/S BY MIL-M-38510/657A）

MIL MIL-M-38510/657 Amendment 7

MICROCIRCUITS, DIGITAL, HIGH SPEED, CMOS, BUFFER GATES, MONOLITHIC SILICON(S/S BY MIL-M-38510/657A)
微型电路数字高速 CMOS 缓冲门单片硅（S/S BY MIL-M-38510/657A）

MIL DESC 5962-96868

MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE BUS BUFFER GATE WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
微电路数字先进的高速CMOS 三态输出的四总线缓冲门单片硅

MIL DSCC V62/03648

MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS, MONOLITHIC SILICON
微电路数字先进的高速CMOS 三态输出的四总线缓冲门单片硅

MIL DESC 5962-96862

MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE BUS BUFFER GATE WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
微电路数字先进的高速CMOS 三态输出的四总线缓冲门单片硅

MIL MIL-M-38510/650C Notice 1-Validation 1

Microcircuits, Digital, High-Speed CMOS, Nand Gates, Monolithic Silicon, Positive Logic
微电路数字高速CMOS Nand Gates 单片硅正逻辑

MIL MIL-M-38510/650C Notice 3-Validation 3

Microcircuits, Digital, High-Speed CMOS, Nand Gates, Monolithic Silicon, Positive Logic
微电路数字高速CMOS Nand Gates 单片硅正逻辑

MIL MIL-M-38510/650C Notice 2-Validation 2

Microcircuits, Digital, High-Speed CMOS, Nand Gates, Monolithic Silicon, Positive Logic
微电路数字高速CMOS Nand Gates 单片硅正逻辑

MIL MIL-M-38510/650A Notice 1-Inactivation 1

MICROCIRCUITS, DIGITAL, HIGH SPEED, CMOS, NAND GATES MONOLITHIC SILICON, POSITIVE LOGIC
微型电路数字高速 CMOS 与非门单片硅正逻辑

MIL MIL-M-38510/651B Notice 1-Validation 1

Microcircuits, Digital, High-Speed CMOS, Nor Gates, Monolithic Silicon, Positive Logic
微电路、数字、高速CMOS、或非门、单片硅、正逻辑

《国家标准化发展纲要》提出建设国家数字标准馆，推动标准化工作向数字化、网络化、智能化转型。中国标准化研究院正在全力推进国家数字标准馆建设，力争在2026年底建成“一个中心”和“一个平台”，即全球领先的标准数据资源中心，涵盖标准全生命周期的数字化、网络化、智能化研究与服务平台。

专题数据库

标准管理系统

大数据分析系统

标准智能研制系统