SJ 20175-1992-半导体分立器件３ＤＧ９１８型ＮＰＮ硅超高频小功率晶体管详细规范-国家数字标准馆

现行 SJ 20175-1992

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半导体分立器件３ＤＧ９１８型ＮＰＮ硅超高频小功率晶体管详细规范 Semiconductor discrete device--Detail specification for NPN silicon ultra-high frequency low-power transistor of Type 3DG918

发布日期： 1992-11-19

实施日期： 1993-05-01

分类信息

发布单位或类别：中国-行业标准-电子

CCS分类： L42电子元器件与信息技术 - 半导体分立器件 - 半导体三极管

关联关系

研制信息

起草单位：中国电子技术标准化研究所和国营九七○厂

起草人：王长福、张宗国、任继利、谢佩兰

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