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现行 MIL MIL-PRF-19500/715 Notice 2-Validation 2
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Semiconductor Device, Field Effect Transistor, Encapsulated Plastic, N-Channel, Silicon, Type 2N7563, 2N764, 2N7565, JAN, JANTX, and JANTXV 半导体器件 场效应晶体管 封装塑料 N沟道 硅 2N7563、2N764、2N7565、JAN、JANTX和JANTXV型
发布日期: 2018-11-07
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发布单位或类别: 美国-美国军事规范和标准
关联关系
研制信息
相似标准/计划/法规
现行
MIL MIL-PRF-19500/715 Notice 1-Validation
Semiconductor Device, Field Effect Transistor, Encapsulated Plastic, N-Channel, Silicon, Type 2N7563, 2N764, 2N7565, JAN, JANTX, and JANTXV
半导体器件 场效应晶体管 封装塑料 N沟道 硅 2N7563、2N764、2N7565、JAN、JANTX和JANTXV型
2013-12-06
现行
MIL MIL-PRF-19500/714 Notice 2-Validation 2
Semiconductor Device, Field Effect Transistor, Encapsulated Plastic, N-Channel, Silicon, Type 2N7558, 2N7559 2N7560, JAN, JANTX, and JANTXV
半导体器件 场效应晶体管 封装塑料 N沟道 硅 2N7558、2N7559 2N7560、JAN、JANTX和JANTXV型
2018-11-07
现行
MIL MIL-PRF-19500/715
Semiconductor Device, Field Effect Transistor, Encapsulated Plastic, N-Channel, Silicon, Type 2N7563, 2N764, 2N7565, JAN, JANTX, and JANTXV
半导体器件 场效应晶体管 封装塑料 N沟道 硅 2N7563 2N764 2N7565 JAN JANTX和JANTXV型
2009-02-23
现行
MIL MIL-PRF-19500/714
Semiconductor Device, Field Effect Transistor, Encapsulated Plastic, N-Channel, Silicon, Type 2N7558, 2N7559 2N7560, JAN, JANTX, and JANTXV
半导体器件 场效应晶体管 封装塑料 N沟道 硅 2N7558 2N7559 2N7560 JAN JANTX和JANTXV型
2009-02-20
现行
MIL MIL-PRF-19500/696A Notice 1-Validation
Semiconductor Device, Field Effect Transistor, Plastic, N-Channel, Silicon, Type 2N7537, 2N7537A, JAN and JANTX
半导体器件 场效应晶体管 塑料 N沟道 硅 2N7537 2N7537A JAN和JANTX型
2013-12-06
现行
MIL MIL-PRF-19500/696B
Semiconductor Device, Field Effect Transistor, Plastic, N-Channel, Silicon, Type 2N7537, 2N7537A, JAN and JANTX
半导体器件 场效应晶体管 塑料 N沟道 硅 2N7537 2N7537A JAN和JANTX型
2017-06-27
现行
MIL DESC 89026A
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON (SUPERSEDING DESC 89026)
半导体器件 场效应晶体管 N沟道 硅(取代DESC 89026)
1992-12-11
现行
MIL DSCC 89007A Notice B-Cancellation
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON(NO S/S DOCUMENT)(SUPERSEDING DESC 89007)
半导体器件 场效应晶体管 N沟道 硅(无S/S文件)(代替DESC 89007)
2000-09-22
现行
MIL DESC 89009A Notice B-Cancellation
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON(NO S/S DOCUMENT)(SUPERSEDING DESC 89009)
半导体器件 场效应晶体管 N沟道 硅(无S/S文件)(代替DESC 89009)
2000-09-22
现行
SJ 20061-1992
半导体分立器件 CS146型硅N沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device--Detail specification for silicon N-channel deplition mode field-effect transistor of Type CS146
1992-11-19
现行
MIL MIL-PRF-19500/547D Notice 1-Validation 1
Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6660 and 2N6661, JAN, JANTX, JANTXV, and JANS
半导体器件 场效应晶体管 N沟道 硅 2N6660和2N6661型 JAN JANTX JANTSV和JANS
2016-07-05
现行
MIL MIL-PRF-19500/428H Notice 1-Validation
Semiconductor Device, Field-Effect Transistor, N-Channel Silicon, Type 2N4416A and 2N4416AUB, JAN, JANTX, JANTXV, and JANS
半导体器件 场效应晶体管 N沟道硅 2N4416A和2N4416AUB型 JAN JANTX JANTSV和JANS
2016-05-24
现行
MIL MIL-PRF-19500/428G Notice 1-Validation
Semiconductor Device, Field-Effect Transistor, N-Channel Silicon, Type 2N4416A and 2N4416AUB, JAN, JANTX, JANTXV, and JANS
半导体器件 场效应晶体管 N沟道硅 2N4416A和2N4416AUB型 JAN JANTX JANTSV和JANS
2011-07-01
现行
MIL MIL-PRF-19500/428H
Semiconductor Device, Field-Effect Transistor, N-Channel Silicon, Type 2N4416A and 2N4416AUB, JAN, JANTX, JANTXV, and JANS
半导体器件 场效应晶体管 N沟道硅 2N4416A和2N4416AUB型 JAN JANTX JANTXV和JANS
2011-08-08
现行
MIL MIL-PRF-19500/547F
Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6660 and 2N6661, JAN, JANTX, JANTXV, and JANS
半导体器件 场效应晶体管 N沟道 硅 2N6660和2N6661型 JAN JANTX JANTXV和JANS
2020-06-30
现行
MIL MIL-PRF-19500/547F Amendment 1
Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6660 and 2N6661, JAN, JANTX, JANTXV, and JANS
半导体器件 场效应晶体管 N沟道 硅 2N6660和2N6661型 JAN JANTX JANTSV和JANS
2020-09-04
现行
SJ 50033/38-1994
半导体分立器件 CS4856~CS4861型硅N沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device--Detail specification for types CS4856~CS4861 silicon N-channel deplition mode field-effect transistor
1994-09-30
现行
SJ 50033/89-1995
半导体分立器件 CS6768和CS6770型硅N沟道增强型场效应晶体管详细规范
Semiconductor discrete devices--Detail specification for Type CS6768 and CS6770 silicon N-channel enhancement mode field effect transistor
1995-05-25
现行
SJ 50033/88-1995
半导体分立器件 CS6760和CS6762型硅N沟道增强型场效应晶体管详细规范
Semiconductor discrete devices--Detail specification for Type CS6760 and CS6762 silicon N-channel enhacement mode field-effect transistor
1995-05-25
现行
SJ 50033/87-1995
半导体分立器件 CS4091~CS4093型硅N沟道耗尽型场效应晶体管详细规范
Semiconductor discrete devices--Detail specification for Type CS4091~CS4093 silicon N-channel deplition mode field-effect transistor
1995-05-25