IEC 63068-4:022（E）提供了通过系统地结合光学检查和光致发光（PL）两种测试方法来识别和评估生长的4H-SiC（碳化硅）同质外延晶片中的缺陷的程序。此外，本文件举例说明了光学检查和PL图像，以实现SiC同质外延晶片中缺陷的检测和分类。

IEC 63068-4:2022(E) provides a procedure for identifying and evaluating defects in as-grown 4H-SiC (Silicon Carbide) homoepitaxial wafer by systematically combining two test methods of optical inspection and photoluminescence (PL). Additionally, this document exemplifies optical inspection and PL images to enable the detection and categorization of defects in SiC homoepitaxial wafers.