1.1 本指南定义了测试硅分立半导体器件和集成电路的要求和程序，以获得中子辐射引起的位移损伤的快速退火效应。该试验将导致辐照设备的电气性能退化，应视为破坏性试验。位移损伤的快速退火通常与双极技术有关。 1.1.1 重离子束也可用于表征位移损伤退火 ( 1. ) , 2. 但是由于相关的电离剂量，离子束在解释所产生的器件行为方面具有显著的复杂性。 使用脉冲离子束作为位移损伤源不在本标准的范围内。 1.2 以国际单位制表示的数值应视为标准。本标准不包括其他计量单位。 1.3 本标准并不旨在解决与其使用相关的所有安全问题（如有）。本标准的使用者有责任在使用前制定适当的安全、健康和环境实践，并确定监管限制的适用性。 1. 4. 本国际标准是根据世界贸易组织技术性贸易壁垒委员会发布的《关于制定国际标准、指南和建议的原则的决定》中确立的国际公认的标准化原则制定的。 ====意义和用途====== 5.1 许多太空、军事和核动力系统中使用的电子电路可能暴露于不同水平和时间分布的中子辐射。对于此类电路的设计和制造至关重要的是，要有可用的测试方法来确定其中使用的组件的脆弱性或硬度（生存能力的衡量标准）。 硬度的测定在短期内通常是必要的( ≈ 100μs）以及暴露后的长期（永久性损伤）。参见实践 E722 .

1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage is usually associated with bipolar technologies. 1.1.1 Heavy ion beams can also be used to characterize displacement damage annealing ( 1 ) , 2 but ion beams have significant complications in the interpretation of the resulting device behavior due to the associated ionizing dose. The use of pulsed ion beams as a source of displacement damage is not within the scope of this standard. 1.2 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use. 1.4 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee. ====== Significance And Use ====== 5.1 Electronic circuits used in many space, military, and nuclear power systems may be exposed to various levels and time profiles of neutron radiation. It is essential for the design and fabrication of such circuits that test methods be available that can determine the vulnerability or hardness (measure of survivability) of components to be used in them. A determination of hardness is often necessary for the short term ( ≈ 100 μs) as well as long term (permanent damage) following exposure. See Practice E722 .