IEC TS 62607-6-10:20 21(E)建立了确定电气钥匙控制特性的标准化方法 -薄层电阻(Rs) 对于石墨烯基材料的薄膜 -太赫兹时域光谱(THz-TDS)。 在该技术中，THz脉冲被发送到基于石墨烯的材料。在时域中测量发射或反射的THz波形，并通过快速傅立叶变换(FFT)将其变换到频域。最后，将光谱拟合到Drude模型（或另一个类似模型）以获得薄层电阻。 ？这种非接触检测方法对于大面积石墨烯薄膜的测绘具有非破坏性、快速和鲁棒性，没有样品尺寸上限。 ？该方法适用于统计过程控制、不同供应商生产的石墨烯薄膜的比较，或获得关于微观尺度上的缺陷（如晶界和缺陷）的信息等。？该方法适用于通过化学气相沉积(CVD)或其他方法在电介质衬底上生长或转移到电介质衬底上的石墨烯，电介质衬底包括但不限于石英、二氧化硅(SiO2)、硅(Si)、蓝宝石、碳化硅(SiC)和聚合物。 ？最小空间分辨率约为300 μ m（在1 THz）由THz脉冲的衍射限制光斑尺寸给出。

IEC TS 62607-6-10:2021(E) establishes a standardized method to determine the electrical key control characteristic
– sheet resistance (Rs)
for films of graphene-based materials by
– terahertz time domain spectroscopy (THz-TDS).
In this technique, a THz pulse is sent to the graphene-based material. The transmitted or reflected THz waveform is measured in the time domain and transformed to the frequency domain by the fast Fourier transform (FFT). Finally, the spectrum is fitted to the Drude model (or another comparable model) to obtain the sheet resistance.
？ This non-contact inspection method is non-destructive, fast and robust for the mapping of large areas of graphene films, with no upper sample size limit.
？ The method is applicable for statistical process control, comparison of graphene films produced by different vendors, or to obtain information about imperfections on the microscale such as grain boundaries and defects, etc.
？ The method is applicable for graphene grown by chemical vapour deposition (CVD) or other methods on or transferred to dielectric substrates, including but not limited to quartz, silica (SiO2), silicon (Si), sapphire, silicon carbide (SiC) and polymers.
？ The minimum spatial resolution is in the order of 300 μm (at 1 THz) given by the diffraction limited spot size of the THz pulse.