MIL MIL-PRF-19500/241T-硅低泄漏可控正向电压二极管型号1N3595-1、1N3595UB、1N3595UB2、1N3595US、1N3595UR-1、1N3595A-1、1N3595AUS和1N3595AUR-1、JAN、JANTX、JANTXV、JANS、JANHC和JANKC-国家数字标准馆

现行 MIL MIL-PRF-19500/241T

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Diode, Silicon, Low Leakage, Controlled Forward Voltage, Types 1N3595-1, 1N3595UB, 1N3595UB2, 1N3595US, 1N3595UR-1, 1N3595A-1, 1N3595AUS, and 1N3595AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC 硅低泄漏可控正向电压二极管型号1N3595-1、1N3595UB、1N3595UB2、1N3595US、1N3595UR-1、1N3595A-1、1N3595AUS和1N3595AUR-1、JAN、JANTX、JANTXV、JANS、JANHC和JANKC

发布日期： 2018-06-04

MIL-PRF-19500/241T涵盖了可控硅正向电压二极管的性能要求。按照MIL-PRF-19500的规定，每种设备类型都有四个级别的产品保证。按照MIL-PRF-19500的规定，每个设备都有四个级别的产品保证。为未封装设备提供两级产品保证。

MIL-PRF-19500/241T covers the performance requirements for silicon, controlled forward voltage diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Four levels of product assurance are provided for each device as specified in MIL-PRF-19500. Two levels of product assurance are provided for unencapsulated devices.

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发布单位或类别：美国-美国军事规范和标准

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现行

MIL MIL-PRF-19500/241H Notice 1-Validation

SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE TYPES 1N3595US, 1N3595UR, 1N3595-1, 1N3595UR-1, AND 1N3595US-1 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC (SUPERSEDING MIL-PRF-19500/241G)
半导体器件、二极管、硅、低泄漏、可控正向电压类型1N3595US、1n3595bur、1n355-1、1n3575ur-1 JAN、JANTX、JANTXV、JANS、JANHC和JANKC（取代MIL-PRF-19500/241G）

2005-03-28