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现行 MIL MIL-PRF-19500/411R
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Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Encapsulated (Through-Hole and Surface Mount Packages) 1N5415 Through 1N5420, JAN, JANTX, JANTXV, and JANS 半导体器件、二极管、硅、功率整流器、快速恢复、封装(通孔和表面安装封装)1N5415至1N5420、JAN、JANTX、JANTXV和JANS
发布日期: 2014-05-05
本规范涵盖了硅整流二极管的性能要求。为每个封装设备提供四个级别的产品保证(JAN、JANTX、JANTXV和JANS)。JANTXV和JANS产品保证提供了四个辐射(“M”、“D”、“R”和“H”)测试水平的辐射硬度保证(RHA)。
This specification covers the performance requirements for silicon rectifier diodes. Four levels of products assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device. Provision for radiation hardness assurance (RHA) to four radiation ("M", "D", "R, and "H") test levels is provided for JANTXV and JANS product assurance.
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发布单位或类别: 美国-美国军事规范和标准
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研制信息
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