MIL MIL-PRF-19500/742C-半导体器件、二极管、硅、超快恢复、功率整流器、1N5802CB、1N5804CB、1N5806CB、1N5807CB、1N5809CB和1N5811CB、1N5802CBUS、1N5804CBUS、1N5806CBUS、1N5807CBUS、1N5809CBUS和1N5811CBUS、JAN、JANTX和JANTXV-国家数字标准馆

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Semiconductor Device, Diode, Silicon, Ultrafast Recovery, Power Rectifier, Types 1N5802CB, 1N5804CB, 1N5806CB, 1N5807CB, 1N5809CB, and 1N5811CB, 1N5802CBUS, 1N5804CBUS, 1N5806CBUS, 1N5807CBUS, 1N5809CBUS, and 1N5811CBUS, JAN, JANTX, and JANTXV 半导体器件、二极管、硅、超快恢复、功率整流器、1N5802CB、1N5804CB、1N5806CB、1N5807CB、1N5809CB和1N5811CB、1N5802CBUS、1N5804CBUS、1N5806CBUS、1N5807CBUS、1N5809CBUS和1N5811CBUS、JAN、JANTX和JANTXV

发布日期： 2019-07-12

MIL-PRF-19500/742C涵盖了硅、快速恢复、功率整流二极管的性能要求。MIL-PRF-19500中规定的每种封装（使用3类冶金键合的非空腔双插头二极管）设备类型都有四个级别的产品保证。这种3类冶金结合也称为压缩结合（CB）。

MIL-PRF-19500/742C covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance are provided for each encapsulated (noncavity double plug diodes utilizing category 3 metallurgical bonding) device types as specified in MIL-PRF-19500. This category 3 metallurgical bonding is also known as compression bonds (CB).

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发布单位或类别：美国-美国军事规范和标准

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