BS PD IEC/TS 62804-1:2015规定了测试和评估晶体材料耐久性的程序 硅光伏（PV）组件受到短期高压应力的影响，包括 潜在诱发降解（PID）。定义了两种测试方法，这两种方法本质上不相同 产生相同的结果。它们被作为筛选测试——两种测试都不包括所有 自然环境中存在的影响PID速率的因素。这些方法描述了 如何达到恒定的压力水平。本技术规范中的测试针对具有以下特性的晶体硅光伏组件: 一个或两个玻璃表面，具有钝化介电层的硅电池，用于降解 涉及移动离子影响硅半导体上电场的机制， 或者与硅半导体本身进行电子交互。本技术规范 不用于评估采用薄膜技术、串联或异质结构的模块 设备。本技术规范描述了测量模块设计能力的方法 在相对较短的时间内承受系统电压效应造成的退化。 本技术规范中的测试并不旨在检查某些组合 可能在较长时间内出现在模块中的影响，例如封装失败， 这可能反过来导致水分迅速进入和电化学腐蚀。这 技术规范中未包含可能影响速率的模块照明 退化。测试方法旨在测量PID灵敏度，并根据实际情况给出结果 各测试固有的应力水平和模块接地配置。 因为应力法（a）是在环境室中进行测试的，它采用了一种非- 浓缩 湿度水平作为电气接地的导电通路，通常应用较少 应力朝向模块表面的中心，PID效应集中在 因此，模块边缘。应力法（b），用接地螺栓接触表面 导电电极，评估电池灵敏度和组件封装的一些影响 玻璃和密封剂等材料具有电阻率，但不能区分 缓解PID的一些施工方法，例如，使用后导轨支架、边缘 夹子和绝缘框架。模块对系统电压应力的实际耐久性将取决于环境 操作条件。这些测试旨在评估光伏组件 对PID的敏感性，与在不同气候和环境下运行的实际应力无关 系统。交叉引用: IEC 60068-2-78:2012IEC 60410 IEC 61215:2005IEC 61730-2:2004ISO/IEC 17025购买时可用的所有当前修订版均包含在本文件的购买中。

BS PD IEC/TS 62804-1:2015 defines procedures to test and evaluate the durability of crystalline silicon photovoltaic (PV) modules to the effects of short-term high-voltage stress including potential-induced degradation (PID). Two test methods are defined that do not inherently produce equivalent results. They are given as screening tests - neither test includes all the factors existing in the natural environment that can affect the PID rate. The methods describe how to achieve a constant stress level.The testing in this Technical Specification is designed for crystalline silicon PV modules with one or two glass surfaces, silicon cells having passivating dielectric layers, for degradation mechanisms involving mobile ions influencing the electric field over the silicon semiconductor, or electronically interacting with the silicon semiconductor itself. This Technical Specification is not intended for evaluating modules with thin-film technologies, tandem, or heterostructure devices.This Technical Specification describes methods to measure the module design's ability to withstand degradation from system voltage effects that manifest in the relatively short term. The testing in this Technical Specification does not purport to examine certain combined effects that may occur over longer periods of time in modules such as encapsulation failure, which could lead in turn to rapid moisture ingress and electrochemical corrosion. This Technical Specification does not incorporate illumination of the module that can affect the rate of degradation.The test methods are designed to measure PID sensitivity and will give results according to the stress levels and the module grounding configuration inherent to the respective tests. Because stress method (a), testing in an environmental chamber, employs a non-condensing humidity level to serve as a conductive pathway to electrical ground, it frequently applies less stress toward the centre of the module face and the PID effect is concentrated toward the module edges as a result. Stress method (b), contacting the surfaces with a grounded conductive electrode, evaluates cell sensitivity and some effects of the component packaging materials such as glass and encapsulant resistivity, but does not differentiate the effects of some construction methods of mitigating PID, for example, the use of rear rail mounts, edge clips, and insulating frames.The actual durability of modules to system voltage stress will depend on the environmental conditions under which they are operated. These tests are intended to assess PV module sensitivity to PID irrespective of actual stresses under operation in different climates and systems.Cross References:IEC 60068-2-78:2012IEC 60410IEC 61215:2005IEC 61730-2:2004ISO/IEC 17025All current amendments available at time of purchase are included with the purchase of this document.