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现行 IEC 63068-2:2019
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Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection 半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第2部分:光学检验缺陷的试验方法
发布日期: 2019-01-30
IEC?63068-2:2019(E)提供了使用光学检测检测商用4H-SiC(碳化硅)外延晶片中生长缺陷的定义和指南。此外,本文件举例说明了光学图像,以便能够检测和分类SiC同质外延晶片的缺陷。本文件涉及缺陷的无损检测方法,因此优先腐蚀等破坏性方法不在本文件范围内。
IEC?63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.
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归口单位: TC 47
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