IEC TS 62607-6-8:2023建立了一种确定关键控制特性薄层电阻RS的方法[以欧姆每平方(？/sq)测量]，通过在线四点探针法，4PP。 薄层电阻RS通过对放置在平面样品表面上的四个电极进行的四端电阻测量而导出。 用本文件中描述的方法对石墨烯样品的RS的测量范围从10？2？/sq到104？/平方。 该方法适用于CVD石墨烯，只要它被转移到石英衬底或其他绝缘材料(石英、Si上的SiO2以及从碳化硅生长的石墨烯。 该方法与van der Pauw方法（IEC 62607-6-7）互补，用于测量薄层电阻，并且当不可能可靠地将触点放置在样品边界上时可以是有用的。

IEC TS 62607-6-8:2023 establishes a method to determine the key control characteristic sheet resistance RS [measured in ohm per square (？/sq)], by the in-line four-point probe method, 4PP.
The sheet resistance RS is derived by measurements of four-terminal electrical resistance performed on four electrodes placed on the surface of the planar sample.
The measurement range for RS of the graphene samples with the method described in this document goes from 10？2？/sq to 104？/sq.
The method is applicable for CVD graphene provided it is transferred to quartz substrates or other insulating materials (quartz, SiO2 on Si, as well as graphene grown from silicon carbide.
The method is complementary to the van der Pauw method (IEC 62607-6-7) for what concerns the measurement of the sheet resistance and can be useful when it is not possible to reliably place contacts on the sample boundary.