Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices-Test method for defects using optical inspection
半导体器件 功率器件用碳化硅同质外延片缺陷的无损识别准则
BS IEC 63068-2:2019 provides definitions and guidance in use of optical inspection for
detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial
wafers. Additionally, this document exemplifies optical images to enable the detection and
categorization of the defects for SiC homoepitaxial wafers.Cross References:ISO 24173All current amendments available at time of purchase are included with the purchase of this document.