首页 馆藏资源 舆情信息 标准服务 科研活动 关于我们
现行 BS IEC 63068-2:2019
到馆提醒
收藏跟踪
购买正版
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices-Test method for defects using optical inspection 半导体器件 功率器件用碳化硅同质外延片缺陷的无损识别准则
发布日期: 2019-02-08
BS IEC 63068-2:2019提供了光学检测的定义和指南 商用4H-SiC(碳化硅)外延片中生长缺陷的检测 薄饼。此外,本文件举例说明了光学图像,以实现检测和分析 SiC同质外延片缺陷的分类。交叉引用:ISO 24173购买本文件时提供的所有现行修订均包含在购买本文件中。
BS IEC 63068-2:2019 provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers.Cross References:ISO 24173All current amendments available at time of purchase are included with the purchase of this document.
分类信息
发布单位或类别: 英国-英国标准学会
关联关系
研制信息
相似标准/计划/法规
现行
BS IEC 63068-1-2019
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices-Classification of defects
半导体器件 功率器件用碳化硅同质外延片缺陷的无损识别准则
2019-05-10
现行
IEC 63068-1-2019
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第1部分:缺陷分类
2019-01-30
现行
GB/T 43493.1-2023
半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第1部分:缺陷分类
Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 1: Classification of defects
2023-12-28
现行
BS IEC 63068-3-2020
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices-Test method for defects using photoluminescence
半导体器件 功率器件用碳化硅同质外延片缺陷的无损识别准则
2020-07-24
现行
IEC 63068-3-2020
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence
半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第3部分:用光致发光法检测缺陷的试验方法
2020-07-13
现行
GB/T 43493.3-2023
半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第3部分:缺陷的光致发光检测方法
Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 3: Test method for defects using photoluminescence
2023-12-28
现行
IEC 63068-2-2019
Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection
半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第2部分:光学检验缺陷的试验方法
2019-01-30
现行
GB/T 43493.2-2023
半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第2部分:缺陷的光学检测方法
Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 2: Test method for defects using optical inspection
2023-12-28
现行
IEC 63068-4-2022
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence
半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第4部分:使用光学检查和光致发光组合方法识别和评估缺陷的程序
2022-07-27