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现行 MIL MIL-M-38510/224 Notice 3-Validation 3
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MICROCIRCUIT, DIGITAL, 262,144 BIT, MOS, ULTRAVIOLET ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EPROM) MOMOLITHIC SILICON 262144位金属氧化物半导体紫外可擦除可编程只读存储器(EPROM)单片硅数字微电路
发布日期: 2006-01-31
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发布单位或类别: 美国-美国军事规范和标准
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现行
MIL MIL-M-38510/224 Amendment 2
MICROCIRCUIT, DIGITAL, 262,144 BIT, MOS, ULTRAVIOLET ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EPROM) MOMOLITHIC SILICON
262144位金属氧化物半导体紫外可擦除可编程只读存储器(EPROM)单片硅数字微电路
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现行
MIL MIL-M-38510/224 Notice 2-Validation 2
MICROCIRCUIT, DIGITAL, 262,144 BIT, MOS, ULTRAVIOLET ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EPROM) MOMOLITHIC SILICON
262144位金属氧化物半导体紫外可擦除可编程只读存储器(EPROM)单片硅数字微电路
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现行
MIL MIL-M-38510/224
MICROCIRCUIT, DIGITAL, 262,144 BIT, MOS, ULTRAVIOLET ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EPROM) MOMOLITHIC SILICON
微电路 数字 262144位 MOS 紫外线可擦除可编程只读存储器(EPROM)多晶硅
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现行
MIL MIL-M-38510/222A
MICROCIRCUIT, DIGITAL, 32,768 BIT MOS, ULTRAVIOLET ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EPROM) MONOLITHIC SILICON (SUPERSEDING MIL-M-38510/222)
微电路 数字 32768位MOS 紫外线可擦除可编程只读存储器(EPROM)单片硅(取代MIL-M-38510/222)
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现行
MIL MIL-M-38510/221A Notice 2-Inactivation
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数字微电路 16384位 MOS 紫外线可擦除可编程只读存储器(EPROM) 单片硅(取代MIL-M-38510/221)
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现行
MIL MIL-M-38510/221A Notice 1-Validation
MICROCIRCUITS, DIGITAL, 16,384 BIT, MOS, ULTRAVIOLET ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EPROM), MONOLITHIC SILICON (SUPERSEDING MIL-M-38510/221)
数字微电路 16384位 MOS 紫外线可擦除可编程只读存储器(EPROM) 单片硅(取代MIL-M-38510/221)
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现行
MIL MIL-M-38510/222A Notice 3-Validation
MICROCIRCUIT, DIGITAL, 32,768 BIT MOS, ULTRAVIOLET ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EPROM) MONOLITHIC SILICON (SUPERSEDING MIL-M-38510/222)
数字微电路 32768位MOS 紫外线可擦除可编程只读存储器(EPROM)单片硅(取代MIL-M-38510/222)
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现行
MIL MIL-M-38510/221A Notice 3-Validation
MICROCIRCUITS, DIGITAL, 16,384 BIT, MOS, ULTRAVIOLET ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EPROM), MONOLITHIC SILICON (SUPERSEDING MIL-M-38510/221)
数字微电路 16384位 MOS 紫外线可擦除可编程只读存储器(EPROM) 单片硅(取代MIL-M-38510/221)
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现行
MIL MIL-M-38510/221A
MICROCIRCUITS, DIGITAL, 16,384 BIT, MOS, ULTRAVIOLET ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EPROM), MONOLITHIC SILICON (SUPERSEDING MIL-M-38510/221)
微电路 数字 16384位 MOS 紫外线可擦除可编程只读存储器(EPROM) 单片硅(取代MIL-M-38510/221)
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